BDV65C

Power Dissipation :
Packaging :
Transistor Polarity : NPN
Mounting Style : SMD/SMT
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 120 V
Collector- Base Voltage VCBO : 120 V
Package / Case : SOT-93
Maximum DC Collector Current : 12 A
Maximum Collector Cut-off Current : 400 uA


Features:

Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C
125 W at 25°C Case Temperature
12 A Continuous Collector Current
Minimum h_FE  of 1000 at 4 V, 5 A



Specifications

RATING		SYMBOL	VALUE	UNIT
Collector-base voltage (IE  = 0)	BDV65 BDV65A BDV65B BDV65C	VCBO	60 80 100 120	V
Collector-emitter voltage (IB = 0)	BDV65 BDV65A BDV65B BDV65C	VCEO	60 80 100 120	V
Emitter-base voltage		VEBO	5	V
Continuous collector current		IC	12	A
Peak collector current (see Note 1)		ICM	15	A
Continuous base current		IB	0.5	A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)		Ptot	125	W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)		Ptot	3.5	W
Operating junction temperature range		Tj	-65 to +150	°C
Storage temperature range		Tstg	-65 to +150	°C
Lead temperature 3.2 mm from case for 10 seconds		TL	260	°C