MFG:Alpha & Omega Semiconductor Inc Category:Discrete Semiconductor Products Package Cooled:TSOP-6 D/C:07+
AO6400, AO6401, AO6401 D1 Datasheet download
Category: Discrete Semiconductor Products
MFG: Alpha & Omega Semiconductor Inc
Package Cooled: TSOP-6
D/C: 07+
Description: MOSFET N-CH 30V 6.9A 6-TSOP
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PDF/DataSheet Download
Datasheet: AO6400
File Size: 323437 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: AO6401
File Size: 475136 KB
Manufacturer: ALPHA
Download : Click here to Download
PDF/DataSheet Download
Datasheet: AO6400
File Size: 323437 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
| Technical/Catalog Information | AO6400 |
| Vendor | Alpha & Omega Semiconductor Inc |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 6.9A |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 6.9A, 10V |
| Input Capacitance (Ciss) @ Vds | 1030pF @ 15V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 12nC @ 4.5V |
| Package / Case | 6-TSOP |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | AO6400 AO6400 785 1067 2 ND 78510672ND 785-1067-2 |
The AO6400 is a kind of N-Channel enhancement mode field effect transistor.It uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5 V.It is suitable for use as a load switch or in PWM applications.
The following is its features: (1) VDS(V) is 30 V; (2) ID is 6.9 A; (3) RDS(ON)< 28m(VGS is 10 V); (4) RDS(ON) < 33m (VGS is 4.5 V); (5) RDS(ON) < 52m (VGS is 2.5V).
What comes next is absolute maximum ratings at TA is 25 (unless otherwise noted).(1): the maximum drain-source voltage(VDS) is 30 V; (2): the maximum gate-source voltage(VGS) is ±12 V; (3): the maximum continuous drain current(ID) is 6.9 A when TA is 25 and 5.8 when TA is 70; (4): pulsed drain current(PD) is 35 A; (5): power dissipation is 2 W at the condition of TA is 25 and is 1.44 W at TA is 70; (6): junction and storage temperature range is from -55 to 150; (7): the typical of maximum junction-to-ambient is 47.5/W at t 10s and the maximum is 62.5/W; (8): the typical of maximum junction-to-ambient is 74/W at steady-state and the maximum is 110/W; (9): the typical of maximum junction-to-lead is 37/W at steady-state and the maximum is 50/W; (10): maximum body-diode continuous current(IS) is 3 A; (11): the typical of diode forward voltage is 0.71 V at IS is 1 A and VGS is 0 V and the maximum is 1 V.
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