AO6400

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power - Max: 2W
Gate Charge (Qg) @ Vgs: 12nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 6.9A
Package / Case: SC-74, SOT-457
Input Capacitance (Ciss) @ Vds: 1030pF @ 15V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.9A, 10V


Features:

V_DS (V) = 30V
ID = 6.9 A
R_DS(ON) < 28m (V_GS = 10V)
R_DS(ON)< 33m (V_GS = 4.5V)
R_DS(ON) < 52m (V_GS = 2.5V)




Pinout






Specifications

Paramete		Symbol	Maximum	Units
Drain-Source Voltage		VDS	30	V
Gate-Source Voltage		VGS	±12	V
Continuous Drain Current A	TA=25°C	ID	6.9	A
	TA=70°C		5.8
Pulsed Drain Current B		IDM	35
Power Dissipation A	TA=25°C	PD	2	W
	TA=70°C		1.44
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150	°C

Description

The AO6400 is a kind of N-Channel enhancement mode field effect transistor.It uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5 V.It is suitable for use as a load switch or in PWM applications.

The following is AO6400's features: (1) VDS(V) is 30 V; (2) ID is 6.9 A; (3) RDS(ON)< 28m(VGS is 10 V); (4) RDS(ON) < 33m (VGS is 4.5 V); (5) RDS(ON) < 52m (VGS is 2.5V).

What comes next is AO6400's absolute maximum ratings at TA is 25 (unless otherwise noted).(1): the maximum drain-source voltage(VDS) is 30 V; (2): the maximum gate-source voltage(VGS) is ±12 V; (3): the maximum continuous drain current(ID) is 6.9 A when TA is 25 and 5.8 when TA is 70; (4): pulsed drain current(PD) is 35 A; (5): power dissipation is 2 W at the condition of TA is 25 and is 1.44 W at TA is 70; (6): junction and storage temperature range is from -55 to 150; (7): the typical of maximum junction-to-ambient is 47.5/W at t 10s and the maximum is 62.5/W; (8): the typical of maximum junction-to-ambient is 74/W at steady-state and the maximum is 110/W; (9): the typical of maximum junction-to-lead is 37/W at steady-state and the maximum is 50/W; (10): maximum body-diode continuous current(IS) is 3 A; (11): the typical of diode forward voltage is 0.71 V at IS is 1 A and VGS is 0 V and the maximum is 1 V.

The AO6400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.




Parameters:

Technical/Catalog Information	AO6400
Vendor	Alpha & Omega Semiconductor Inc
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	6.9A
Rds On (Max) @ Id, Vgs	28 mOhm @ 6.9A, 10V
Input Capacitance (Ciss) @ Vds	1030pF @ 15V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	12nC @ 4.5V
Package / Case	6-TSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AO6400 AO6400 785 1067 2 ND 78510672ND 785-1067-2