75N10, 75N75, 75NE75 Selling Leads, Datasheet
MFG:IXYS Package Cooled:TO-3 D/C:O9+
75N10, 75N75, 75NE75
- Table of contents:
Info of 75N10
Info of 75N75
Info of 75NE75
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About 75N43102
PDF/DataSheet Download
Datasheet: 75N43102
File Size: 43888 KB
Manufacturer: IDT [Integrated Device Technology]
Download : Click here to Download
About 75N75
PDF/DataSheet Download
Datasheet: 75N75
File Size: 185405 KB
Manufacturer: UTC
Download : Click here to Download
About 75N43102
PDF/DataSheet Download
Datasheet: 75N43102
File Size: 43888 KB
Manufacturer: IDT [Integrated Device Technology]
Download : Click here to Download
75N75 General Description
The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.
75N75 Maximum Ratings
| PARAMETER | SYMBOL | RATINGS | UNIT | |
| Drain to Source Voltage | VDSS | 75 | V | |
| Continuous Drain Current | TC = 25 .. | ID | 75 | A |
| TC = 100 .. | 56 | A | ||
| Drain Current Pulsed (Note 1) | IDM | 300 | A | |
| Gate to Source Voltage | VGS | ±20 | V | |
| Avalanche Energy | Single Pulsed (Note 2) | EAS | 300 | mJ |
| Repetitive (Note 1) | EAR | 900 | mJ | |
| Peak Diode Recovery dv/dt (Note 3) | dv/dt | 15 | V/ns | |
| Total Power Dissipation | TC = 25 .. | PD | 220 | W |
| Derating above 25 .. | 1.4 | W/.. | ||
| Junction Temperature | TJ | +150 | .. | |
| Storage Temperature | TSTG | -55 ~ +150 | .. | |
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
75N75 Features
* RDS(ON) = 12.5mΩ @VGS = 10 V
* Ultra low gate charge ( typical 90 nC )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
* Ultra low gate charge ( typical 90 nC )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
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