Features: ·Dynamic dv/dt Rating·175°C Operating Temperature·Fast switching·Ease of Paralleling·Simple Drive RequirementsSpecifications Symbol Parameter Max. Unit ID @ TC = 25°C Continuous Drain Current,VGS@10V 75 1 A ID @ TC = 100°C Continuous Drain Current,VGS...
75NF75: Features: ·Dynamic dv/dt Rating·175°C Operating Temperature·Fast switching·Ease of Paralleling·Simple Drive RequirementsSpecifications Symbol Parameter Max. Unit ID @ TC = 25°C ...
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Symbol |
Parameter |
Max. |
Unit |
ID @ TC = 25°C |
Continuous Drain Current,VGS@10V |
75 1 |
A
|
ID @ TC = 100°C |
Continuous Drain Current,VGS@10V |
360 | |
IDM |
Pulsed Drain Current 2 |
300 | |
PD @ TC = 25°C |
Power Dissipation |
200 |
W |
Linear Derating Factor |
1.5 |
W/°C | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAR |
Single Pulse Avalanche Energy 3 |
23 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt 4 |
5.9 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +175 |
°C |
Soldering Temperature, for 10 seconds |
300 (1.6mm) from case) | ||
Mounting Torque, 6-32 or M3 screw |
10 lbf`in (1.1N`m) |
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 370mH, RG = 25, IAS = 40A,VGS=10V (See Figure 12)
ISD 40A, di/dt 300A/s, VDD V(BR)DSS,TJ 175°C
Third Generation HEXFETs from International Rectifier provide the designer of the 75P42100 with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.