6AM13, 6AM14, 6AM15 Selling Leads, Datasheet
MFG:HITACHI Package Cooled:SIP D/C:08+/09+
6AM13, 6AM14, 6AM15 Datasheet download
Part Number: 6AM13
MFG: HITACHI
Package Cooled: SIP
D/C: 08+/09+
6AM13, 6AM14, 6AM15
- Table of contents:
Info of 6AM13
Info of 6AM14
Info of 6AM15
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About 6AM13
PDF/DataSheet Download
Datasheet: 6AM13
File Size: 66786 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About 6AM14
PDF/DataSheet Download
Datasheet: 6AM14
File Size: 63876 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
About 6AM15
PDF/DataSheet Download
Datasheet: 6AM15
File Size: 242209 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
6AM13 Maximum Ratings
| Item | Symbol |
Ratings Nch |
Pch | Unit |
| Drain to source voltage | VDSS | 60 | 60 | V |
| Gate to source voltage | VGSS | ±20 | ±20 | V |
| Drain current | ID | 10 | -10 | A |
| Drain peak current | ID(pulse)*1 | 40 | -40 | A |
| Body-drain diode reverse drain current | IDR | 10 | -10 | A |
| Avalanche current | IAP Note3 |
10 | -10 | A |
| Avalanche energy | EAR Note3 |
8.5 | mJ | |
| Channel dissipation | Pch(Tc = 25°C)*2 | 42 | W | |
| Channel dissipation | Pch*2 | 4.8 | W | |
| Channel temperature | Tch | 150 | °C | |
| Storage temperature | Tstg | 55 to +150 | °C |
6AM13 Features
` Low on-resistance
N-channel: RDS(on) £ 0.075 , VGS = 10 V, ID = 5 A
P-channel: RDS(on) £ 0.12 , VGS = 10 V, ID = 5 A
` Capable of 4 V gate drive
` Low drive current
` High speed switching
` High density mounting
` Suitable for H-bridged motor driver
N-channel: RDS(on) £ 0.075 , VGS = 10 V, ID = 5 A
P-channel: RDS(on) £ 0.12 , VGS = 10 V, ID = 5 A
` Capable of 4 V gate drive
` Low drive current
` High speed switching
` High density mounting
` Suitable for H-bridged motor driver
6AM13 Typical Application
High speed power switching
6AM14 Maximum Ratings
| Item | Symbol |
Ratings Nch |
Pch | Unit |
| Drain to source voltage | VDSS | 60 | 60 | V |
| Gate to source voltage | VGSS | ±20 | ±20 | V |
| Drain current | ID | 7 | -7 | A |
| Drain peak current | ID(pulse)*1 | 28 | -28 | A |
| Reverse drain current | IDR | 7 | -7 | A |
| Channel dissipation | Pch*2 | 42 | W | |
| Channel dissipation | Pch*2 | 4.8 | W | |
| Channel temperature | Tch | 150 | °C | |
| Storage temperature | Tstg | -55 to +150 | °C |
6AM14 Features
• Low on-resistance
• Low drive current
• High speed switching
• High density mounting
• Low drive current
• High speed switching
• High density mounting
6AM14 Typical Application
High speed power switching
6AM15 Maximum Ratings
| Item | Symbol |
Ratings Nch |
Pch | Unit |
| Drain to source voltage | VDSS | 60 | 60 | V |
| Gate to source voltage | VGSS | ±20 | ±20 | V |
| Drain current | ID | 10 | -10 | A |
| Drain peak current | ID(pulse)Note1 | 40 | -40 | A |
| Body-drain diode reverse drain current | IDR | 10 | -10 | A |
| Avalanche current | IAPNote3 | 10 | -10 | A |
| Avalanche energy | EARNote3 | 8.5 | mJ | |
| Channel dissipation | Pch (Tc = 25°C)Note2 | 42 | W | |
| Channel dissipation | Pch Note2 | 4.8 | W | |
| Channel temperature | Tch | 150 | °C | |
| Storage temperature | Tstg | 55 to +150 | °C |
6AM15 Features
• Low on-resistance
N Channel : RDS(on) = 0.045 W typ.
P Channel : RDS(on) = 0.085 W typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
• High density mounting
N Channel : RDS(on) = 0.045 W typ.
P Channel : RDS(on) = 0.085 W typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
• High density mounting
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