Features: ` Low on-resistance N-channel: RDS(on) 0.17 W, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) 0.2 W, VGS = 10 V, ID = 2.5 A` Capable of 4 V gate drive` Low drive current` High speed switching` High density mounting` Suitable for H-bridged motor driver` Discrete packaged devices of same die:...
6AM11: Features: ` Low on-resistance N-channel: RDS(on) 0.17 W, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) 0.2 W, VGS = 10 V, ID = 2.5 A` Capable of 4 V gate drive` Low drive current` High speed switching...
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Item |
Symbol |
Nch |
Pch |
Unit |
Drain to source voltage |
VDSS |
60 |
60 |
V |
Gate to source voltage |
VGSS |
±20 |
±20 |
V |
Drain current |
ID |
5 |
-5 |
A |
Drain peak current |
ID(pulse)*1 |
20 |
20 |
A |
Body to drain diode reverse drain current |
IDR |
5 |
-5 |
A |
Channel dissipation |
Pch (Tc = 25°C) *2 |
36 |
W | |
Pch*2 |
4.8 |
W | ||
Channel temperature |
Tch |
150 |
°C | |
Storage temperature |
Tstg |
55 to +150 |
°C |