Features: • Low on-resistance N Channel : RDS(on) = 0.045 W typ. P Channel : RDS(on) = 0.085 W typ.• High speed switching• 4 V gate drive device can be driven from 5 V source• High density mountingSpecifications Item Symbol Ratings Nch Pch Unit Drain to sourc...
6AM15: Features: • Low on-resistance N Channel : RDS(on) = 0.045 W typ. P Channel : RDS(on) = 0.085 W typ.• High speed switching• 4 V gate drive device can be driven from 5 V source•...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Item | Symbol |
Ratings Nch |
Pch | Unit |
Drain to source voltage | VDSS | 60 | 60 | V |
Gate to source voltage | VGSS | ±20 | ±20 | V |
Drain current | ID | 10 | -10 | A |
Drain peak current | ID(pulse)Note1 | 40 | -40 | A |
Body-drain diode reverse drain current | IDR | 10 | -10 | A |
Avalanche current | IAPNote3 | 10 | -10 | A |
Avalanche energy | EARNote3 | 8.5 | mJ | |
Channel dissipation | Pch (Tc = 25°C)Note2 | 42 | W | |
Channel dissipation | Pch Note2 | 4.8 | W | |
Channel temperature | Tch | 150 | °C | |
Storage temperature | Tstg | 55 to +150 | °C |