4N48, 4N48A, 4N49 Selling Leads, Datasheet
MFG:TI Package Cooled:N/A D/C:872
4N48, 4N48A, 4N49
- Table of contents:
Info of 4N48
Info of 4N48A
Info of 4N49
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About 4N48
PDF/DataSheet Download
Datasheet: 4N48
File Size: 93832 KB
Manufacturer: MICROPAC [Micropac Industries]
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About 4N48A
PDF/DataSheet Download
Datasheet: 4N48A
File Size: 94801 KB
Manufacturer: MICROPAC [Micropac Industries]
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About 4N49
PDF/DataSheet Download
Datasheet: 4N49
File Size: 93832 KB
Manufacturer: MICROPAC [Micropac Industries]
Download : Click here to Download
4N48 General Description
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47, 4N48 and 4N49's can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANTX, JANTXV and JANS quality levels.
4N48 Maximum Ratings
Input to Output Voltage...............................................................................................1kV
Emitter-Collector Voltage...............................................................................................7V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero)............................40V
Collector-Base Voltage..................................................................................................45V
Reverse Input Voltage ...................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)..........40mA
Peak Forward Input Current (Value applies for tw < 1s, PRR < 300 pps)......................1A
Continuous Collector Current......................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2)........300mW
Storage Temperature..............................................................................-65°C to +125°C
Operating Free-Air Temperature Range...................................................-55°C to +125°C
Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds)......................240°C
Emitter-Collector Voltage...............................................................................................7V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero)............................40V
Collector-Base Voltage..................................................................................................45V
Reverse Input Voltage ...................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)..........40mA
Peak Forward Input Current (Value applies for tw < 1s, PRR < 300 pps)......................1A
Continuous Collector Current......................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2)........300mW
Storage Temperature..............................................................................-65°C to +125°C
Operating Free-Air Temperature Range...................................................-55°C to +125°C
Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds)......................240°C
4N48 Features
* High Reliability
* Base lead provided for conventional transistor biasing
* Rugged package
* High gain, high voltage transistor
* +1kV electrical isolation
* Base lead provided for conventional transistor biasing
* Rugged package
* High gain, high voltage transistor
* +1kV electrical isolation
4N48 Typical Application
* Eliminate ground loops
* Level shifting
* Line receiver
* Switching power supplies
* Motor control
* Level shifting
* Line receiver
* Switching power supplies
* Motor control
4N48A General Description
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47A, 4N48A and 4N49A's can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANTX, JANTXV and JANS quality levels.
4N48A Maximum Ratings
Input to Output Voltage.........................................................................................1kV
Emitter-Collector Voltage.........................................................................................7V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero).......40V
Collector-Base Voltage...........................................................................................45V
Reverse Input Voltage ............................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)........40mA
Peak Forward Input Current (Value applies for tw < 1s, PRR < 300 pps)..............1A
Continuous Collector Current..............................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2).......300mW
Storage Temperature....................................................................-65°C to +125°C
Operating Free-Air Temperature Range...........................................-55°C to +125°C
Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds)..............240°C
Emitter-Collector Voltage.........................................................................................7V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero).......40V
Collector-Base Voltage...........................................................................................45V
Reverse Input Voltage ............................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)........40mA
Peak Forward Input Current (Value applies for tw < 1s, PRR < 300 pps)..............1A
Continuous Collector Current..............................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2).......300mW
Storage Temperature....................................................................-65°C to +125°C
Operating Free-Air Temperature Range...........................................-55°C to +125°C
Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds)..............240°C
4N48A Features
* High Reliability
* Base lead provided for conventional transistor biasing
* Rugged package
* High gain, high voltage transistor
* +1kV electrical isolation
* Base lead provided for conventional transistor biasing
* Rugged package
* High gain, high voltage transistor
* +1kV electrical isolation
4N48A Typical Application
* Eliminate ground loops
* Level shifting
* Line receiver
* Switching power supplies
* Motor control
* Level shifting
* Line receiver
* Switching power supplies
* Motor control
4N49 General Description
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47, 4N48 and 4N49's can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANTX, JANTXV and JANS quality levels.
4N49 Maximum Ratings
Input to Output Voltage...............................................................................................1kV
Emitter-Collector Voltage...............................................................................................7V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero)............................40V
Collector-Base Voltage..................................................................................................45V
Reverse Input Voltage ...................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)..........40mA
Peak Forward Input Current (Value applies for tw < 1s, PRR < 300 pps)......................1A
Continuous Collector Current......................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2)........300mW
Storage Temperature..............................................................................-65°C to +125°C
Operating Free-Air Temperature Range...................................................-55°C to +125°C
Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds)......................240°C
Emitter-Collector Voltage...............................................................................................7V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero)............................40V
Collector-Base Voltage..................................................................................................45V
Reverse Input Voltage ...................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)..........40mA
Peak Forward Input Current (Value applies for tw < 1s, PRR < 300 pps)......................1A
Continuous Collector Current......................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2)........300mW
Storage Temperature..............................................................................-65°C to +125°C
Operating Free-Air Temperature Range...................................................-55°C to +125°C
Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds)......................240°C
4N49 Features
* High Reliability
* Base lead provided for conventional transistor biasing
* Rugged package
* High gain, high voltage transistor
* +1kV electrical isolation
* Base lead provided for conventional transistor biasing
* Rugged package
* High gain, high voltage transistor
* +1kV electrical isolation
4N49 Typical Application
* Eliminate ground loops
* Level shifting
* Line receiver
* Switching power supplies
* Motor control
* Level shifting
* Line receiver
* Switching power supplies
* Motor control
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