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Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47, 4N48 and 4N49's can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANTX, JANTXV and JANS quality levels.
4N47 Maximum Ratings
Input to Output Voltage...............................................................................................1kV Emitter-Collector Voltage...............................................................................................7V Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero)............................40V Collector-Base Voltage..................................................................................................45V Reverse Input Voltage ...................................................................................................2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)..........40mA Peak Forward Input Current (Value applies for tw < 1s, PRR < 300 pps)......................1A Continuous Collector Current......................................................................................50mA Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2)........300mW Storage Temperature..............................................................................-65°C to +125°C Operating Free-Air Temperature Range...................................................-55°C to +125°C Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds)......................240°C
4N47 Features
* High Reliability * Base lead provided for conventional transistor biasing * Rugged package * High gain, high voltage transistor * +1kV electrical isolation
4N47 Typical Application
* Eliminate ground loops * Level shifting * Line receiver * Switching power supplies * Motor control
4N47A General Description
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47A, 4N48A and 4N49A's can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANTX, JANTXV and JANS quality levels.
4N47A Maximum Ratings
Input to Output Voltage.........................................................................................1kV Emitter-Collector Voltage.........................................................................................7V Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero).......40V Collector-Base Voltage...........................................................................................45V Reverse Input Voltage ............................................................................................2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)........40mA Peak Forward Input Current (Value applies for tw < 1s, PRR < 300 pps)..............1A Continuous Collector Current..............................................................................50mA Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2).......300mW Storage Temperature....................................................................-65°C to +125°C Operating Free-Air Temperature Range...........................................-55°C to +125°C Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds)..............240°C
4N47A Features
* High Reliability * Base lead provided for conventional transistor biasing * Rugged package * High gain, high voltage transistor * +1kV electrical isolation
4N47A Typical Application
* Eliminate ground loops * Level shifting * Line receiver * Switching power supplies * Motor control