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30EPH06PBF, 30ETH06, 30ETH06-1

Table of contents:
Info of 30EPH06PBF
Info of 30ETH06
Info of 30ETH06-1

30EPH06PBF, 30ETH06, 30ETH06-1 Selling Leads, Datasheet

MFG:Vishay Package Cooled:TO-247 D/C:2010+

30EPH06PBF, 30ETH06, 30ETH06-1 Datasheet download

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Part Number: 30EPH06PBF

MFG: Vishay

Package Cooled: TO-247

D/C: 2010+

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30EPH06PBF General Description

      The 30EPH06PbF is a kind of hyperfast rectifier.It is designed with optimized performance of forward voltage drop,hyperfast recover time, and soft recovery.The planar structure and the platinum doped life time control guarantee the best overall performance, ruggednessand reliability characteristics.It is widely used in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes.The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
      Here you can get some information about the features.Hyperfast tecovery time,low forward voltage drop and low leakage current are its unique characteristics.Beisies,the operating junction temperature is 175°C.It is a kind of single diode device.What's more,it is Lead-Free ("PbF" suffix).
      The following is about the absolute maximum ratings.The V_RRM (Peak Repetitive Reverse Voltage) is 600 V.The I_F(AV) (Average Rectifier Forward Current) is 30 A at T_C = 116.The I_FSM(Non Repetitive Peak Surge Current) is 300 A at T_J= 25.The T_J, T_STG (Operating Junction and Storage Temperatures) ranges from - 65 to 175 .
      The electrical characteristics at T_J= 25 come next.The Min V_BR, V_r (Breakdown Voltage,Blocking Voltage) is 600 V at I_R = 100A.The typical V_F (Forward Voltage) is 2.0 V and the Max is 2.6 V at I_F = 30A, T_J= 25.But the typical V_F is 1.34 V and the Max is 1.75 V at I_F= 30A, T_J = 150°C.The typical I_R (Reverse Leakage Current) is 0.3A and the Max is 50A at V_R= V_R Rated.But The typical I_R is 60A and the Max is 500A at T_J= 150, V_R = V_R Rated.The typical C_T (Junction Capacitance) is 33 pF at V_R = 600V.The typical L_S (Series Inductance) is 3.5 nH which is measured lead to lead 5mm from package body.

30EPH06PBF Maximum Ratings

30EPH06PBF Features

30ETH06 General Description

State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast recover time, and soft recovery.

The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics.

These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes.

The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

30ETH06 Maximum Ratings

Parameters	Max	Units
V_RRM Peak Repetitive Reverse Voltage	600	V
I_F(AV) Average Rectifier Forward Current @ T_C = 103°C	30	A
I_FSM Non Repetitive Peak Surge Current @ T_J = 25°C	200	A
T_J, T_STG Operating Junction and Storage Temperatures	- 65 to 175	°C

30ETH06 Features

* Hyperfastfast Recovery Time
* Low Forward Voltage Drop
* Low Leakage Current
*175°C Operating Junction Temperature
* Dual Diode Center Tap

30ETH06 Typical Application

State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast recover time, and soft recovery.

The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics.

These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes.

The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

30ETH06-1 General Description

State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast recover time, and soft recovery.

The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics.

These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes.

The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

30ETH06-1 Maximum Ratings

Parameters	Max	Units
V_RRM Peak Repetitive Reverse Voltage	600	V
I_F(AV) Average Rectifier Forward Current @ T_C = 103°C	30	A
I_FSM Non Repetitive Peak Surge Current @ T_J = 25°C	200	A
T_J, T_STG Operating Junction and Storage Temperatures	- 65 to 175	°C

30ETH06-1 Features

* Hyperfastfast Recovery Time
* Low Forward Voltage Drop
* Low Leakage Current
*175°C Operating Junction Temperature
* Dual Diode Center Tap

30ETH06-1 Typical Application

State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast recover time, and soft recovery.

The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics.

These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes.

The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

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