19N10, 19N20, 19NE06 Selling Leads, Datasheet
MFG:. Package Cooled:252 D/C:06+
19N10, 19N20, 19NE06
- Table of contents:
Info of 19N10
Info of 19N20
Info of 19NE06
Attentive hint
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Top Sellers:
TOP
About
PDF/DataSheet Download
Datasheet:
File Size: KB
Manufacturer:
Download : Click here to Download
About
PDF/DataSheet Download
Datasheet:
File Size: KB
Manufacturer:
Download : Click here to Download
About
PDF/DataSheet Download
Datasheet:
File Size: KB
Manufacturer:
Download : Click here to Download
19N10 General Description
The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC's planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
19N10 Maximum Ratings
| Parameter | Symbol | Ratings | Unit |
| Drain-Source Voltage | VDSS | 100 | V |
| Gate-Source Voltage | VGSS | ± 25 | V |
| Continuous Drain Current | ID | 15.6 | A |
| Pulsed Drain Current (Note 2) | IDM | 62.4 | A |
| Avalanche Current (Note 2) | IAR | 15.6 | A |
| Single Pulsed Avalanche Energy (Note 3) | EAS | 220 | mJ |
| Repetitive Avalanche Energy (Note 2) | EAE | 5.0 | mJ |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 6.0 | V/ns |
| Power Dissipation | PD | 50 | W |
| Derate above 25 | 0.4 | W/ | |
| Junction Temperature | Tj | +150 | |
| Storage Temperature | Tstg | -55 to +150 |
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
19N10 Features
* RDS(ON) = 0.1Ω @VGS = 10 V
* Ultra low gate charge ( typical 19nC )
* Low reverse transfer Capacitance ( CRSS = typical 32pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
* Ultra low gate charge ( typical 19nC )
* Low reverse transfer Capacitance ( CRSS = typical 32pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
MT58L64L18CT-10
Price: 4-6 USD
MT58L64L18CT-10 TQFP100
DL-7140-211M
Price: 5-6.5 USD
DL-7140-211M laser tube
74LVC74APG
Price: 4-5 USD
74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2
Price: 6.5-8 USD
CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX
Price: 0.284-0.286 USD
PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2
Price: 1-2 USD
IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB
Price: 1-2 USD
a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1
Price: 0.124-0.2 USD
PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L
Price: 0.177-0.178 USD
RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A
Price: 0.053-0.055 USD
STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013
Price: 1.45-1.5 USD
STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B
Price: 0.073-0.075 USD
SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components
