19N10

Features: * RDS(ON) = 0.1Ω @VGS = 10 V* Ultra low gate charge ( typical 19nC )* Low reverse transfer Capacitance ( CRSS = typical 32pF )* Fast switching capability* Avalanche energy Specified* Improved dv/dt capability, high ruggednessSpecifications Parameter Symbol Ratings Unit D...

product image

19N10 Picture
SeekIC No. : 004212317 Detail

19N10: Features: * RDS(ON) = 0.1Ω @VGS = 10 V* Ultra low gate charge ( typical 19nC )* Low reverse transfer Capacitance ( CRSS = typical 32pF )* Fast switching capability* Avalanche energy Specified*...

floor Price/Ceiling Price

Part Number:
19N10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

* RDS(ON) = 0.1Ω @VGS = 10 V
* Ultra low gate charge ( typical 19nC )
* Low reverse transfer Capacitance ( CRSS = typical 32pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness



Specifications

Parameter Symbol Ratings Unit
Drain-Source Voltage VDSS 100 V
Gate-Source Voltage VGSS ± 25 V
Continuous Drain Current ID 15.6 A
Pulsed Drain Current (Note 2) IDM 62.4 A
Avalanche Current (Note 2) IAR 15.6 A
Single Pulsed Avalanche Energy (Note 3) EAS 220 mJ
Repetitive Avalanche Energy (Note 2) EAE 5.0 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 6.0 V/ns
Power Dissipation PD 50 W
Derate above 25 0.4 W/
Junction Temperature Tj +150
Storage Temperature Tstg -55 to +150
Note: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.



Description

The 19N10 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC's planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. The 19N10 is suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Hardware, Fasteners, Accessories
LED Products
Soldering, Desoldering, Rework Products
Potentiometers, Variable Resistors
View more