Features: * RDS(ON) = 0.1Ω @VGS = 10 V* Ultra low gate charge ( typical 19nC )* Low reverse transfer Capacitance ( CRSS = typical 32pF )* Fast switching capability* Avalanche energy Specified* Improved dv/dt capability, high ruggednessSpecifications Parameter Symbol Ratings Unit D...
19N10: Features: * RDS(ON) = 0.1Ω @VGS = 10 V* Ultra low gate charge ( typical 19nC )* Low reverse transfer Capacitance ( CRSS = typical 32pF )* Fast switching capability* Avalanche energy Specified*...
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Parameter | Symbol | Ratings | Unit |
Drain-Source Voltage | VDSS | 100 | V |
Gate-Source Voltage | VGSS | ± 25 | V |
Continuous Drain Current | ID | 15.6 | A |
Pulsed Drain Current (Note 2) | IDM | 62.4 | A |
Avalanche Current (Note 2) | IAR | 15.6 | A |
Single Pulsed Avalanche Energy (Note 3) | EAS | 220 | mJ |
Repetitive Avalanche Energy (Note 2) | EAE | 5.0 | mJ |
Peak Diode Recovery dv/dt (Note 4) | dv/dt | 6.0 | V/ns |
Power Dissipation | PD | 50 | W |
Derate above 25 | 0.4 | W/ | |
Junction Temperature | Tj | +150 | |
Storage Temperature | Tstg | -55 to +150 |
The 19N10 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC's planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. The 19N10 is suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.