Features: • High Voltage IGBT- substitute for high voltage MOSFETs with significantly lower voltage drop and comparable switching speed - substitute for high voltage thyristors with voltage control of turn on & turn off- substitute for electromechanical trigger and discharge relays•...
19N250A: Features: • High Voltage IGBT- substitute for high voltage MOSFETs with significantly lower voltage drop and comparable switching speed - substitute for high voltage thyristors with voltage co...
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• High Voltage IGBT
- substitute for high voltage MOSFETs with significantly lower voltage drop and comparable switching speed
- substitute for high voltage thyristors with voltage control of turn on & turn off
- substitute for electromechanical trigger and discharge relays
• ISOPLUS i4-PACTM high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high voltage pins
- application friendly pinout
- high reliability
- industry standard outline
- UL registered E72873
Symbol | Conditions | Maximum | Ratings |
VCES | TVJ = 25°C to 150°C | 2500 | V |
VGES | ± 20 | V | |
IC25 IC90 |
TC = 25°C TC = 90°C |
32 19 |
A A |
ICM VCEK |
VGE = ±15 V; RG = 47 ; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 H |
70 1200 |
A V |
Ptot | TC = 25°C | 250 | W |