19N250A

Features: • High Voltage IGBT- substitute for high voltage MOSFETs with significantly lower voltage drop and comparable switching speed - substitute for high voltage thyristors with voltage control of turn on & turn off- substitute for electromechanical trigger and discharge relays•...

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SeekIC No. : 004212318 Detail

19N250A: Features: • High Voltage IGBT- substitute for high voltage MOSFETs with significantly lower voltage drop and comparable switching speed - substitute for high voltage thyristors with voltage co...

floor Price/Ceiling Price

Part Number:
19N250A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

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Upload time: 2024/11/27

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Product Details

Description



Features:

• High Voltage IGBT
- substitute for high voltage MOSFETs
with significantly lower voltage drop and comparable switching speed
- substitute for high voltage thyristors with voltage control of turn on & turn off
- substitute for electromechanical trigger and discharge relays
• ISOPLUS i4-PACTM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high voltage pins
- application friendly pinout
- high reliability
- industry standard outline
- UL registered E72873




Application

• switched mode power supplies
• DC-DC converters
• resonant converters
• laser generators, x ray generators
• discharge circuits



Specifications

Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 2500 V
VGES   ± 20 V
IC25
IC90
TC = 25°C
TC = 90°C
32
19
A
A
ICM
VCEK
VGE = ±15 V; RG = 47 ; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 H
70
1200
A
V
Ptot TC = 25°C 250 W



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