XP133A0245SR

Features:

Low on-state resistance: Rds(on)=0.045(Vgs=4.5V)
                                          Rds(on)=0.060(Vgs=2.5V)
                                          Rds(on)=0.1(Vgs=1.5V)
Ultra high-speed switching
Operational Voltage: 1.5V
High density mounting: SOP-8


Application

 Notebook PCs
 Cellular and portable phones
 On-board power supplies
 Li-ion battery systems


Pinout




Specifications

PARAMETER	SYMBOL	RATINGS	UNITS
Drain-Source Voltage	Vdss	20	V
Gate-Source Voltage	Vgss	±8	V
Drain Current (DC)	Id	5	A
Drain Current (Pulse)	Idp	15	A
Reverse Drain Current	Idr	5	A
Continuous Channel Power Dissipation (note)	Pd	2	W
Channel Temperature	Tch	150
Storage Temperature	Tstg	-55~150

Description

The XP133A0245SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Two FET XP133A0245SR are built into the one package.

Because high-speed switching is possible, the XP133A0245SR can be efficiently set thereby saving energy.

The small SOP-8 package of XP133A0245SR makes high density mounting possible.