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XP131A0150SR

Features: Low on-state resistance : Rds(on)=0.035 (Vgs=10V) : Rds(on)=0.050 (Vgs=4.5V)Ultra high-speed switching Operational Voltage : 4.5VHigh density mounting : SOP-8Application·Notebook PCs·Cellular and portable phones·On-board power supplies·Li-ion battery systemsPinoutSpecifications PA...

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XP131A0150SR: Features: Low on-state resistance : Rds(on)=0.035 (Vgs=10V) : Rds(on)=0.050 (Vgs=4.5V)Ultra high-speed switching Operational Voltage : 4.5VHigh density mounting : SOP-8Application·Notebook PCs·Cellu...

XP131A0150SR Data Sheet

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Part Number:
XP131A0150SR
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

Low on-state resistance : Rds(on)=0.035 (Vgs=10V) : Rds(on)=0.050 (Vgs=4.5V)
Ultra high-speed switching Operational Voltage : 4.5V
High density mounting : SOP-8


Application

·Notebook PCs
·Cellular and portable phones
·On-board power supplies
·Li-ion battery systems


Pinout

Connection Diagram


Specifications

PARAMETER
SYMBOL
RATINGS
UNITS
Drain-Source Voltage
Vdss
30
V
Gate-Source Voltage
Vgss
±20
V
Drain Current (DC)
Id
7
A
Drain Current (Pulse)
Idp
20
A
Reverse Drain Current
Idr
7
A
Continuous Channel
Power Dissipation (note)
Pd
2.5
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55~150
Note: When implemented on a glass epoxy PCB


Description

The XP131A0150SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

The small SOP-8 package of XP131A0150SR makes high density mounting possible.




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