Features: Low on-state resistance: Rds(on)=0.032(Vgs=4.5V)Rds(on)=0.045(Vgs=2.5V) Rds(on)=0.08(Vgs=1.5V)Ultra high-speed switchingOperational Voltage: 1.5VHigh density mounting: SOP-8ApplicationNotebook PCsCellular and portable phonesOn-board power suppliesL...
XP131A0232SR: Features: Low on-state resistance: Rds(on)=0.032(Vgs=4.5V)Rds(on)=0.045(Vgs=2.5V) Rds(on)=0.08(Vgs=1.5V)Ultra high-speed switchingOperational Voltage: 1.5VHigh density mounting: SOP-8Application ...
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Features: Low on-state resistance : Rds(on)=0.035 (Vgs=10V) : Rds(on)=0.050 (Vgs=4.5V)Ultra high-s...
Features: Low on-state resistance: Rds(on)=0.017(Vgs=10V) Rds(on)=0.026(Vgs=4.5V)Ultra high-speed ...
Features: ·Low on-state resistance: Rds(on)=0.016Ω(Vgs=4.5V) : Rds(on)=0.022Ω(Vgs=2.5V...
PARAMETER |
SYMBOL |
RATINGS |
UNITS |
Drain-Source Voltage |
Vdss |
20 |
V |
Gate-Source Voltage |
Vgss |
±8 |
V |
Drain Current (DC) |
Id |
8 |
A |
Drain Current (Pulse) |
Idp |
25 |
A |
Reverse Drain Current |
Idr |
8 |
A |
Continuous Channel |
Pd |
2.5 |
W |
Channel Temperature |
Tch |
150 |
|
Storage Temperature |
Tstg |
-55~150 |
The XP131A0232SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the XP131A0232SR can be efficiently set thereby saving energy.
The small SOP-8 package of XP131A0232SR makes high density mounting possible.