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XP131A0616SR

Features: ·Low on-state resistance: Rds(on)=0.016Ω(Vgs=4.5V) : Rds(on)=0.022Ω(Vgs=2.5V): Rds(on)=0.045Ω(Vgs=1.5V)·Ultra high-speed switching·Operational Voltage : 1.5V·High density mounting: SOP-8Application·Notebook PCs·Cellular and portable phones·On-board power supplies·Li-ion...

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XP131A0616SR: Features: ·Low on-state resistance: Rds(on)=0.016Ω(Vgs=4.5V) : Rds(on)=0.022Ω(Vgs=2.5V): Rds(on)=0.045Ω(Vgs=1.5V)·Ultra high-speed switching·Operational Voltage : 1.5V·High density...

XP131A0616SR Data Sheet

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Part Number:
XP131A0616SR
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Low on-state resistance: Rds(on)=0.016Ω(Vgs=4.5V)
                                         : Rds(on)=0.022Ω(Vgs=2.5V)
                                         : Rds(on)=0.045Ω(Vgs=1.5V)
·Ultra high-speed switching
·Operational Voltage       : 1.5V
·High density mounting   : SOP-8


Application

·Notebook PCs
·Cellular and portable phones
·On-board power supplies
·Li-ion battery systems


Pinout

Connection Diagram


Specifications

PARAMETER SYMBOL RATINGS UNITS
Drain-Source Voltage Vdss 20 V
Gate-Source Voltage Vgss ±8 V
Drain Current (DC) Id 10 A
Drain Current (Pulse) Idp 30 A
Reverse Drain Current Idr 10 A
Continuous Channel
Power Dissipation (note)		 Pd 2.5 W
Channel Temperature Tch 150
Storage Temperature Tstg -55~150



Description

The XP131A0616SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the XP131A0616SR can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.




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