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XP133A0175SR

Features: Low on-state resistance: Rds(on)=0.048(Vgs=10V) Rds(on)=0.075(Vgs=4.5V)Ultra high-speed switchingOperational Voltage: 4.5VHigh density mounting: SOP-8ApplicationNotebook PCsCellular and portable phonesOn-board power suppliesLi-ion battery systemsPinoutSpecifications PARAMETER S...

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XP133A0175SR: Features: Low on-state resistance: Rds(on)=0.048(Vgs=10V) Rds(on)=0.075(Vgs=4.5V)Ultra high-speed switchingOperational Voltage: 4.5VHigh density mounting: SOP-8ApplicationNotebook PCsCellular and po...

XP133A0175SR Data Sheet

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Part Number:
XP133A0175SR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low on-state resistance: Rds(on)=0.048(Vgs=10V)
                                          Rds(on)=0.075(Vgs=4.5V)
Ultra high-speed switching
Operational Voltage: 4.5V
High density mounting: SOP-8


Application

 Notebook PCs
 Cellular and portable phones
 On-board power supplies
 Li-ion battery systems


Pinout

Connection Diagram


Specifications

PARAMETER

SYMBOL

RATINGS

UNITS

Drain-Source Voltage

Vdss

30

V

Gate-Source Voltage

Vgss

±20

V

Drain Current (DC)

Id

5

A

Drain Current (Pulse)

Idp

15

A

Reverse Drain Current

Idr

5

A

Continuous Channel
Power Dissipation (note)

Pd

2

W

Channel Temperature

Tch

150

Storage Temperature

Tstg

-55~150




Description

The XP133A0175SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package.

Because high-speed switching is possible, the XP133A0175SR can be efficiently set  thereby saving energy.

The small SOP-8 package of XP133A0175SR makes high density mounting possible.




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