Features: ·Low on-state resistance (Nch) :Rds (on) = 0.033Ω ( Vgs = 10V ) Rds (on) = 0.045Ω ( Vgs = 4.5V )·Low on-state resistance (Pch) :Rds (on) = 0.065Ω ( Vgs = -10V ) Rds (on) = 0.110Ω ( Vgs = -4.5V )·Ultra high-speed switching·Operational Voltage : 4.5V (Nch) : -4.5V (...
XP135A1145SR: Features: ·Low on-state resistance (Nch) :Rds (on) = 0.033Ω ( Vgs = 10V ) Rds (on) = 0.045Ω ( Vgs = 4.5V )·Low on-state resistance (Pch) :Rds (on) = 0.065Ω ( Vgs = -10V ) Rds (on) ...
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Features: ·Low on-state resistance : Rds (on) = 0.075Ω ( Vgs = -4.5V : Rds (on) = 0.115͐...
Features: ·Low on-state resistance: Rds(on)=0.065Ω(Vgs=-10V) Rds(on)=0.11Ω(Vgs=-4.5V)·...
Features: ` Low On-State Resistance :Rds(on)=0.065(Vgs=-10V) :Rds(on)=0.11(Vgs=-4.5V)` Ultra High-...
·Low on-state resistance (Nch) :Rds (on) = 0.033Ω ( Vgs = 10V )
Rds (on) = 0.045Ω ( Vgs = 4.5V )
·Low on-state resistance (Pch) :Rds (on) = 0.065Ω ( Vgs = -10V )
Rds (on) = 0.110Ω ( Vgs = -4.5V )
·Ultra high-speed switching
·Operational Voltage : 4.5V (Nch) : -4.5V (Pch)
·High density mounting : SOP - 8
PARAMETER | SYMBOL | RATINGS | UNITS | |
Nch | Pch | |||
Drain-Source Voltage | Vdss | 30 | - 30 | V |
Gate-Source Voltage | Vgss | ±20 | 20 | V |
Drain Current (DC) | Id | 10 | - 4 | A |
Drain Current (Pulse) | Idp | 40 | - 16 | A |
Reverse Drain Current | Idr | 10 | - 4 | A |
Continuous Channel Power Dissipation (note) |
Pd | 2 | W | |
Channel Temperature | Tch | 150 | ||
Storage Temperature | Tstg | -55to150 |
The XP135A1145SR is a N-Channel/P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching Two FET devices are built-into the one package. Because high-speed switching is possible, the XP135A1145SR can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. characteristics.