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XP135A1145SR

Features: ·Low on-state resistance (Nch) :Rds (on) = 0.033Ω ( Vgs = 10V ) Rds (on) = 0.045Ω ( Vgs = 4.5V )·Low on-state resistance (Pch) :Rds (on) = 0.065Ω ( Vgs = -10V ) Rds (on) = 0.110Ω ( Vgs = -4.5V )·Ultra high-speed switching·Operational Voltage : 4.5V (Nch) : -4.5V (...

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SeekIC No. : 004548989 Detail

XP135A1145SR: Features: ·Low on-state resistance (Nch) :Rds (on) = 0.033Ω ( Vgs = 10V ) Rds (on) = 0.045Ω ( Vgs = 4.5V )·Low on-state resistance (Pch) :Rds (on) = 0.065Ω ( Vgs = -10V ) Rds (on) ...

XP135A1145SR Data Sheet

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Part Number:
XP135A1145SR
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Low on-state resistance (Nch) :Rds (on) = 0.033Ω ( Vgs = 10V )
                                                  Rds (on) = 0.045Ω ( Vgs = 4.5V )
·Low on-state resistance (Pch) :Rds (on) = 0.065Ω ( Vgs = -10V )
                                                  Rds (on) = 0.110Ω ( Vgs = -4.5V )
·Ultra high-speed switching
·Operational Voltage : 4.5V (Nch) : -4.5V (Pch)
·High density mounting : SOP - 8




Application

·Notebook PCs
·Cellular and portable phones
·On - board power supplies


Pinout

Connection Diagram


Specifications

PARAMETER SYMBOL RATINGS UNITS
Nch Pch
Drain-Source Voltage Vdss 30 - 30 V
Gate-Source Voltage Vgss ±20 20 V
Drain Current (DC) Id 10 - 4 A
Drain Current (Pulse) Idp 40 - 16 A
Reverse Drain Current Idr 10 - 4 A
Continuous Channel
Power Dissipation (note)		 Pd 2 W
Channel Temperature Tch 150
Storage Temperature Tstg -55to150



Description

The XP135A1145SR is a N-Channel/P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching Two FET devices are built-into the one package. Because high-speed switching is possible, the XP135A1145SR can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. characteristics.




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