Features: • 3.3V± 0.3V for -5/-6 speed grades power supply• 2. 7V~3.6V for -7/-7S speed grades power supply• 1,048,576 words × 4 banks × 16 bits organization• Self Refresh Current: Standard and Low Power• CAS Latency: 2 & 3• Burst Length: 1, 2, 4, 8 and full...
W9864G6IH: Features: • 3.3V± 0.3V for -5/-6 speed grades power supply• 2. 7V~3.6V for -7/-7S speed grades power supply• 1,048,576 words × 4 banks × 16 bits organization• Self Refresh Cu...
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PARAMETER | SYMBOL | RATING | UNIT | NOTES |
Input, Column Output Voltage | VIN, VOUT | -0.3 ~ VDD+ 0.3 | V | 1 |
Power Supply Voltage | VCC, VCCQ | -0.3 ~ 4.6 | V | 1 |
Operating Temperature | TOPR | 0 ~ 70 | 1 | |
Storage Temperature | TSTG | -55 ~ 150 | 1 | |
Soldering Temperature (10s) | TSOLDER | 260 | 1 | |
Power Dissipation | PD | 1 | W | 1 |
Short Circuit Output Current | IOUT | 50 | mA | 1 |
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliabilityof the device.
W9864G6IH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits. W9864G6IH delivers a data bandwidth of up to 200M words per second. For different application, W9864G6IH is sorted into the following speed grades: -5, -6, -7/-7S. The -5 parts can run up to 200MHz/CL3. The -6 parts can run up to 166MHz/CL3. The -7/-7S parts can run up to 143MHz/CL3. And the grade of -7S with tRP = 18nS.
The multiple bank nature enables interleaving among internal banks to hide the precharging time.By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9864G6IH is ideal for main memory in high performance applications.