W986408CH

Features: · 3.3V ± 0.3V power supply· Up to 133MHz clock frequency· 2,097,152 words x 4 banks x 8 bits organization· Auto Refresh and Self Refresh· CAS latency: 2 and 3· Burst Length: 1, 2, 4, 8 , and full page· Burst read, Single Writes Mode· Byte data controlled by DQM· Power-Down Mode· Auto-Pre...

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W986408CH Picture
SeekIC No. : 004545364 Detail

W986408CH: Features: · 3.3V ± 0.3V power supply· Up to 133MHz clock frequency· 2,097,152 words x 4 banks x 8 bits organization· Auto Refresh and Self Refresh· CAS latency: 2 and 3· Burst Length: 1, 2, 4, 8 , a...

floor Price/Ceiling Price

Part Number:
W986408CH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/11/20

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Product Details

Description



Features:

· 3.3V ± 0.3V power supply
· Up to 133MHz clock frequency
· 2,097,152 words x 4 banks x 8 bits organization
· Auto Refresh and Self Refresh
· CAS latency: 2 and 3
· Burst Length: 1, 2, 4, 8 , and full page
· Burst read, Single Writes Mode
· Byte data controlled by DQM
· Power-Down Mode
· Auto-Precharge and controlled precharge
· 4k refresh cycles / 64ms
· Interface: LVTTL
· Package: TSOP II 54 pin, 400 mil - 0.80



Pinout

  Connection Diagram


Specifications

SYMBOL

ITEM

RATING
UNIT
NOTES
VIN,VOUT
Input, Output Voltage
-0.3~VCC+0.3
V
1
VCC,VCCQ
Power Supply Voltage
-0.3~4.6
V
1
TOPR
Operating Temperature
0~70
°C
1
TSTG
Storage Temperature
-55~150
°C
1
TSOLDER
Soldering Temperature(10s)
260
°C
1
PD
Power Dissipation
1
W
1
IOUT
Short Circuit Output Current
50
mA
1



Description

W986408CH is a high speed synchronous dynamic random access memory (SDRAM) , organized as 2M words x 4 banks x 8 bits. Using pipelined architecture and 0.20um process technology, W986408CH delivers a data bandwidth of up to 133M ( - 75) bytes per second. To fully comply to the personal computer industrial standard, W986408CH is sorted into two speed grades: -75 and -8H. The -75 is compliant to the PC133 specitication, The -8H is compliant to the  C100/CL2 specification

Accesses to the SDRAM W986408CH are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM W986408CH internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.

By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W986408CH is ideal for main memory in high performance applications.




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