W986408AH

Features: · 3.3V ± 0.3V power supply· Comply to PC100/66 specification· 2,097,152 words x 4 banks x 8 bits organization· Auto Refresh and Self Refresh· CAS latency: 2 and 3· Burst Length: 1, 2, 4, 8 , and full page· Sequential and Interleave burst· Burst read, single-bit writes operation· Byte dat...

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W986408AH Picture
SeekIC No. : 004545362 Detail

W986408AH: Features: · 3.3V ± 0.3V power supply· Comply to PC100/66 specification· 2,097,152 words x 4 banks x 8 bits organization· Auto Refresh and Self Refresh· CAS latency: 2 and 3· Burst Length: 1, 2, 4, 8...

floor Price/Ceiling Price

Part Number:
W986408AH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

· 3.3V ± 0.3V power supply
· Comply to PC100/66 specification
· 2,097,152 words x 4 banks x 8 bits organization
· Auto Refresh and Self Refresh
· CAS latency: 2 and 3
· Burst Length: 1, 2, 4, 8 , and full page
· Sequential and Interleave burst
· Burst read, single-bit writes operation
· Byte data controlled by DQM
· Power-Down Mode
· Auto-Precharge and controlled precharge
· 4k refresh cycles / 64ms
· Interface: LVTTL
· Package: TSOP II 54 pin, 400 mil - 0.80



Pinout

  Connection Diagram


Specifications

SYMBOL

ITEM

RATING

UNIT

NOTES

VIN,VOUT

Input, Output Voltage

-0.3~VCC+0.3

V

1

VCC,VCCQ

Power Supply Voltage

-0.3~4.6

V

1

TOPR

Operating Temperature

0~70

°C

1

TSTG

Storage Temperature

-55~150

°C

1

TSOLDER

Soldering Temperature(10s)

260

°C

1

PD

Power Dissipation

1

W

1

IOUT

Short Circuit Output Current

50

mA

1




Description

W986408AH is a high speed synchronous dynamic random access memory (SDRAM) , organized as 2M words x 4 banks x 8 bits. Using pipelined architecture, W986408AH delivers a data bandwidth of up to 125M (-8H) bytes per second. To fully comply to the PC100/66 personal computer industrial standard, W986408AH is sorted into three speed grades: -8H, -8N, and -10. The -8H is compliant to the PC100/CL2 specification, the -8N is compliant to PC100/CL3 specification, and -10 is compliant to PC/66 specification.

Accesses to the SDRAM W986408AH are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM W986408AH internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.

By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W986408AH is ideal for main memory in high performance applications.




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