W9864G6GH

Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliabilityof the device.

W9864G6GH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words * 4 banks * 16 bits. Using pipelined architecture and 0.11 m process technology, W9864G6GH delivers a data bandwidth of up to 400M bytes per second. For different application, W9864G6GH is sorted into the following speed grades: -5, -6/-6I, -7/-7S. The -5 parts can run up to 200MHz/CL3. The -6/-6I parts can run up to 166MHz/CL3. The -7/-7S parts can run up to 143MHz/CL3. And the grade of 7S with tRP=18nS.

Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing W9864G6GH's address at each clock cycle.

The multiple bank nature enables interleaving among internal banks to hide the precharging time.By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9864G6GH is ideal for main memory in high performance applications.