Features: · 3.3V±0.3V power supply· Up to 166 MHz clock frequency· 1,048,576 words x 4 banks x 16 bits organization· Auto Refresh and Self Refresh· CAS latency: 2 and 3· Burst Length: 1, 2, 4, 8 , and full page· Burst read, Single Writes Mode· Byte data controlled by UDQM and LDQM· Power-Down Mode...
W986416CH: Features: · 3.3V±0.3V power supply· Up to 166 MHz clock frequency· 1,048,576 words x 4 banks x 16 bits organization· Auto Refresh and Self Refresh· CAS latency: 2 and 3· Burst Length: 1, 2, 4, 8 , a...
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SYMBOL |
ITEM |
RATING |
UNIT |
NOTES |
VIN,VOUT |
Input, Output Voltage |
-0.3~ Vcc +0.3 |
V |
1 |
VCC,VCCQ |
Power Supply Voltage |
-0.3~4.6 |
V |
1 |
VDDQ |
I/O Power Supply Voltage |
-0.3~3.6 |
V |
1 |
TOPR |
Operating Temperature |
0~70 |
°C |
1 |
TSTG |
Storage Temperature |
-55~150 |
°C |
1 |
TSOLDER |
Soldering Temperature(10s) |
260 |
°C |
1 |
PD |
Power Dissipation |
1 |
W |
1 |
IOUT |
Short Circuit Output Current |
50 |
mA |
1 |
W986416CH is a high speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Using pipelined architecture and 0.20um process technology, W986416CH delivers a data bandwidth of up to 332M bytes per second (-6). For different application, W986416CH is sorted into four speed grades: -6, -7, -75 and -8H. The -6 parts can run up to 166Mhz/CL3. The -7 parts can run up to 143Mhz/CL3 specification. The -75 parts can run up to PC133/CL3 specification. The -8H parts can run up to 125Mhz/CL3 or PC100/CL2 specification.
Accesses to the SDRAM W986416CH are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM W986416CH internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W986416CH is ideal for main memory in high performance applications.