W986416BH

Features: · 3.3V±0.3V power supply· Up to 143Mhz clock frequency· 1,048,576 words x 4 banks x 16 bits organization· Auto Refresh and Self Refresh· CAS latency: 2 and 3· Burst Length: 1, 2, 4, 8 , and full page· Sequential and Interleave burst· Burst read, Single Writes Mode· Byte data controlled b...

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W986416BH Picture
SeekIC No. : 004545366 Detail

W986416BH: Features: · 3.3V±0.3V power supply· Up to 143Mhz clock frequency· 1,048,576 words x 4 banks x 16 bits organization· Auto Refresh and Self Refresh· CAS latency: 2 and 3· Burst Length: 1, 2, 4, 8 , an...

floor Price/Ceiling Price

Part Number:
W986416BH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/23

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Product Details

Description



Features:

· 3.3V±0.3V power supply
· Up to 143Mhz clock frequency
· 1,048,576 words x 4 banks x 16 bits organization
· Auto Refresh and Self Refresh
· CAS latency: 2 and 3
· Burst Length: 1, 2, 4, 8 , and full page
· Sequential and Interleave burst
· Burst read, Single Writes Mode
· Byte data controlled by UDQM and LDQM
· Power-Down Mode
· Auto-Precharge and controlled precharge
· 4k refresh cycles / 64ms
· Interface: LVTTL
· Package: TSOP II 54 pin, 400 mil - 0.80



Pinout

  Connection Diagram


Specifications

SYMBOL

ITEM

RATING

UNIT

NOTES

VIN,VOUT

Input, Output Voltage

-0.3~VCC+0.3

V

1

VCC,VCCQ

Power Supply Voltage

-0.3~4.6

V

1

TOPR

Operating Temperature

0~70

°C

1

TSTG

Storage Temperature

-55~150

°C

1

TSOLDER

Soldering Temperature(10s)

260

°C

1

PD

Power Dissipation

1

W

1

IOUT

Short Circuit Output Current

50

mA

1




Description

W986416BH is a high speed synchronous dynamic random access memory (SDRAM) , organized as 1M words x 4 banks x 16 bits. Using pipelined architecture and 0.25um process technology, W986416BH delivers a data bandwidth of up to 286M bytes per second (-7). For different application, W986416BH is sorted into four speed grades: -7, -75, -8H, and -8N. The 7 parts can run up to 143Mhz/CL3, the -75 parts are compliant to the PC133/CL3 specification, the -8H parts are compliant to the PC100/CL2 specification, and the -8N is compliant to PC100/CL3 specification.

Accesses to the SDRAM W986416BH are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM W986416BH internal counrter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.

By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W986416BH is ideal for main memory in high performance applications.




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