Features: • 2.5V ±0.2V Power Supply for DDR266• 2.5V ±0.2V Power Supply for DDR333• 2.6V ±0.1V Power Supply for DDR400• Up to 200 MHz Clock Frequency• Double Data Rate architecture; two data transfers per clock cycle• Differential clock inputs (CLK and CLK)̶...
W942516CH: Features: • 2.5V ±0.2V Power Supply for DDR266• 2.5V ±0.2V Power Supply for DDR333• 2.6V ±0.1V Power Supply for DDR400• Up to 200 MHz Clock Frequency• Double Data Rate ...
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PARAMETER |
SYMBOL |
RATING |
UNIT |
Input/Output Voltage |
VIN, VOUT |
0.3 − VDDQ +0.3 |
V |
Power Supply Voltage |
VDD, VDDQ |
-0.3 − 3.6 |
V |
Operating Temperature |
TOPR |
0 − 70 |
°C |
Storage Temperature |
TSTG |
-55 − 150 |
°C |
Soldering Temperature (10s) |
TSOLDER |
260 |
°C |
Power Dissipation |
PD |
1 |
W |
Short Circuit Output Current |
IOUT |
50 |
mA |
W942516CH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words * 4 banks * 16 bits. Using pipelined architecture and 0.13 m process technology, W942516CH delivers a data bandwidth of up to 400M words per second (-5). To fully comply with the personal computer industrial standard, W942516CH is sorted into four speed grades: -5, -6, -7, -75 The -5 is compliant to the 200 MHz/CL2.5 & CL3 specification, The -6 is compliant to the 166 MHz/CL2.5 specification, the -7 is compliant to the 143 MHz/CL2.5 or DDR266/CL2 specification, the -75 is compliant to the DDR266/CL2.5 specification.
All Inputs of W942516CH reference to the positive edge of CLK (except for DQ, DM, and CKE). The timing reference point for the differential clock is when the CLK and CLKsignals cross during a transition. And Write and Read data are synschronized with the both edges of DQS (Data Strobe).
By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W942516CH is ideal for main memory in high performance applications.