V62C3161024L(L)

* Note: Stresses greater than those listed above Absolute Maximum Ratings may cause
             permanent damage to the device. This is a stress rating only and function operation
            of the device at these or any other conditions outside those indicated in the operational 
            sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions 
            for extended periods may affect reliability.

The V62C3161024L(L) is a Low Power CMOS Static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW (CE) and (OE) pin.

This device has an automatic power-down mode feature when deselected. Separate Byte Enable controls (BLE and BHE) allow individual bytes to be accessed. BLE controls the lower bits I/O1 - I/O8. BHE controls the upper bits I/O9 - I/O16.

Writing to these devices is performed by taking Chip Enable (CE) with Write Enable (WE) and Byte Enable (BLE/BHE) LOW.

Reading from the device is performed by taking Chip Enable (CE) with Output Enable (OE) and Byte Enable (BLE/BHE) LOW while Write Enable (WE) is held HIGH.