DescriptionThe V62C3161024L is a low power CMOS static RAM organized as 65536 words by 16 bits. Easy memory expansion is provided by an active LOW CE and OE pin. The features of the V62C3161024L are: (1)ultra low-power consumption; (2)55/70/85/100 ns access time; (3)equal access and cycle time; (4...
V62C3161024L: DescriptionThe V62C3161024L is a low power CMOS static RAM organized as 65536 words by 16 bits. Easy memory expansion is provided by an active LOW CE and OE pin. The features of the V62C3161024L are...
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Features: • Ultra Low-power consumption - Active: 30mA ICC at 70ns - Stand-by: 5 A(CMOS inpu...
Features: • Ultra Low-power consumptionActive: 30mA ICC at 70ns tand-by: 5 mA(CMOS input/out...
Features: • Low-power consumption - Active: 35mA ICC at 70ns - Stand-by: 10 mA (CMOS input/o...
The V62C3161024L is a low power CMOS static RAM organized as 65536 words by 16 bits. Easy memory expansion is provided by an active LOW CE and OE pin. The features of the V62C3161024L are: (1)ultra low-power consumption; (2)55/70/85/100 ns access time; (3)equal access and cycle time; (4)single+2.7V to 3.3V power supply; (5)tri-state output; (6)automatic power-down when deselected; (7)multiple center power and ground pins for improved noise immunity.
The absolute maximum ratings of the V62C3161024L are: (1)voltage on any pin relative to GND: -0.5V min and 4.6V max; (2)power dissipation: 1.0W max; (3)storage temperature: -55 min and 150 max; (4)temperature under bias: -40 min and 85 max.
The following is about the electrical characteristics of V62C3161024L: (1)input leakage current: 1A max at Vcc=max, Vin=Gnd to Vcc; (2)output leakage current: 1A max at CE=VIH or Vcc=max, VOUT=Gnd to Vcc; (3)operating power supply current: 3mA max at CE=VIL, VIN=VIH or VIL, IOUT=0; (4)average operating current: 40mA max at IOUT=0mA, min cycle, 100% duty; (5)standby power supply current: 0.5mA max at CE=VIH; (6)output low voltage: 0.4V max at IOL=2mA