Features: • Ultra Low-power consumption -Active: 25mA at 70ns-tand-by: 5 mA (CMOS input/output) 1mA CMOS input/output, L version• Single +2.2V to 2.7V Power Supply• Equal access and cycle time• 70/85/100/150 ns access time• Easy memory expansion with CE1, CE2 nd OE i...
V62C2801024L(L): Features: • Ultra Low-power consumption -Active: 25mA at 70ns-tand-by: 5 mA (CMOS input/output) 1mA CMOS input/output, L version• Single +2.2V to 2.7V Power Supply• Equal access a...
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Features: • Ultra Low-power consumption - Active: 30mA ICC at 70ns - Stand-by: 5 A(CMOS inpu...
Features: • Low-power consumption Active: 25mA at 70ns Stand-by: 10 mA (CMOS input/output)2 ...
Features: High-speed: 85, 100 ns Ultra low standby current of 2A (max.) Fully static operation All...
Parameter |
Symbol |
Minimum |
Maximum |
Unit |
Voltage on Any Pin Relative to Gnd |
Vt |
-0.5 |
4.6 |
V |
Power Dissipation |
PT |
- |
1.0 |
W |
Storage Temperature (Plastic) |
Tstg |
-55 |
+150 |
0C |
Temperature Under Bias |
Tbias |
-40 |
+85 |
0C |
The V62C2801024L(L) is a low power CMOS Static RAM organized s 131,072 words by 8 bits. Easy memory expansion is rovided by an active LOW CE1, an active HIGH CE2, an ctive LOW OE, and Tri-state I/O's. This device has an automatic wer-down mode feature when deselected.
Writing to the device is accomplished by taking Chip Enable (CE1) with Write Enable (WE) LOW, and Chip Enable (CE2) HIGH. Reading from the device is performed y taking Chip Enable 1 (CE1) with Output Enable OE) LOW while Write Enable (WE) and Chip Enable 2 CE2) is HIGH. The I/O pins are placed in a high-impedance tate when the device is deselected: the outputs are disabled uring a write cycle.
The V62C2801024L(L) comes with a 1V data retention feature nd Lower Standby Power. The V62C2801024L is available in 32pin 8 x 20 mm TSOP1 / STSOP / 48-fpBGA packages.