Features: • Ultra Low-power consumption Active: 35mA ICC at 55ns Stand-by: 5 mA(CMOS input/output)1mA(CMOS input/output,Lversion)• 55/70/85/100 ns access time• Equal access and cycle time• Single +2.2V to 2.7V Power Supply• Tri-state output• Automatic power-down...
V62C2161024L(L): Features: • Ultra Low-power consumption Active: 35mA ICC at 55ns Stand-by: 5 mA(CMOS input/output)1mA(CMOS input/output,Lversion)• 55/70/85/100 ns access time• Equal access and cyc...
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Features: • Ultra Low-power consumption - Active: 30mA ICC at 70ns - Stand-by: 5 A(CMOS inpu...
Features: • Ultra Low-power consumptionActive: 30mA ICC at 70ns tand-by: 5 mA(CMOS input/out...
Features: • Low-power consumption - Active: 35mA ICC at 70ns - Stand-by: 10 mA (CMOS input/o...
Parameter |
Symbol |
Minimum |
Maximum |
Unit |
Voltage on Any Pin Relative to Gnd |
Vt |
-0.5 |
+4.6 |
V |
Power Dissipation |
PT |
- |
1.0 |
W |
Storage Temperature (Plastic) |
Tstg |
-55 |
+150 |
0C |
Temperature Under Bias |
Tbias |
-40 |
+85 |
0C |
The V62C2161024L(L) is a Low Power CMOS Static RAM rganized as 65,536 words by 16 bits. Easy memory expansion s provided by an active LOW (CE) and (OE) pin.
This device has an automatic power-down mode feature hen deselected. Separate Byte Enable controls (BLE nd BHE) allow individual ytes to be accessed. BLEcontrols the lower bits I/O1 - I/O8. BHE controls the uper bits I/O9 - I/O16.
Writing to these devices is performed by taking Chip nable (CE) with Write Enable (WE) and Byte Enable BLE/BHE) LOW.
Reading from the device is performed by taking ChipEnable (CE) with Output Enable (OE) and Byte Enable BLE/BHE) LOW while Write Enable (WE) is heldIGH.