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V436516S04VATG-75

Features: 168 Pin Unbuffered 16,777,216 x 64 bit Oganization SDRAM DIMMUtilizes High Performance 128 Mbit, 16M x 8 SDRAM in TSOPII-54 PackagesFully PC Board Layout Compatible to INTEL'S Rev 1.0 Module SpecificationSingle +3.3V (± 0.3V) Power SupplyProgrammableCAS Latency, Burst Length, and Wrap Se...

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SeekIC No. : 004539832 Detail

V436516S04VATG-75: Features: 168 Pin Unbuffered 16,777,216 x 64 bit Oganization SDRAM DIMMUtilizes High Performance 128 Mbit, 16M x 8 SDRAM in TSOPII-54 PackagesFully PC Board Layout Compatible to INTEL'S Rev 1.0 Modu...

V436516S04VATG-75 Data Sheet

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Part Number:
V436516S04VATG-75
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

168 Pin Unbuffered 16,777,216 x 64 bit Oganization SDRAM DIMM
Utilizes High Performance 128 Mbit, 16M x 8 SDRAM in TSOPII-54 Packages
Fully PC Board Layout Compatible to INTEL'S Rev 1.0 Module Specification
Single +3.3V (± 0.3V) Power Supply
Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
All Inputs, Outputs are LVTTL Compatible
4096 Refresh Cycles every 64 ms
Serial Present Detect (SPD)
SDRAM Performance


Pinout

Connection Diagram


Specifications

Symbol

Parameter

Limit Values

Unit

Min.

Max.

VIH

Input High Voltage

2.0

VCC+0.3

V

VIL

Input Low Voltage

0.5

0.8

V

VOH

Output High Voltage (IOUT = 2.0 mA)

2.4

-

V

VOL

Output Low Voltage (IOUT = 2.0 mA)

-

0.4

V

II(L)

Input Leakage Current, any input
(0 V < VIN < 3.6 V, all other inputs = 0V)

40

40

mA

IO(L)

Output leakage current
(DQ is disabled, 0V < VOUT < VCC)

40

40

mA




Description

The V436516S04VATG-75 memory module is organized 16,777,216 x 64 bits in a 168 pin dual in line memory module (DIMM). The 16M x 64 memory module uses 8 Mosel-Vitelic 16M x 8 SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times are required.




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