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V436416S04V(C)TG-75

Features: 168 Pin Unbuffered 16,777,216 x 64 bit Oganization SDRAM DIMMsUtilizes High Performance 8M x 8 SDRAM in TSOPII-54 PackagesFully PC Board Layout Compatible to INTEL'S Rev 1.0 Module SpecificationSingle +3.3V (± 0.3V) Power SupplyProgrammable CAS Latency, Burst Length, and Wrap Sequence (S...

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SeekIC No. : 004539818 Detail

V436416S04V(C)TG-75: Features: 168 Pin Unbuffered 16,777,216 x 64 bit Oganization SDRAM DIMMsUtilizes High Performance 8M x 8 SDRAM in TSOPII-54 PackagesFully PC Board Layout Compatible to INTEL'S Rev 1.0 Module Specifi...

V436416S04V(C)TG-75 Data Sheet

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Part Number:
V436416S04V(C)TG-75
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

 168 Pin Unbuffered 16,777,216 x 64 bit Oganization SDRAM DIMMs
 Utilizes High Performance 8M x 8 SDRAM in TSOPII-54 Packages
 Fully PC Board Layout Compatible to INTEL'S Rev 1.0 Module Specification
 Single +3.3V (± 0.3V) Power Supply
 Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave)
 Auto Refresh (CBR) and Self Refresh
 All Inputs, Outputs are LVTTL Compatible
 4096 Refresh Cycles every 64 ms
 Serial Present Detect (SPD)
 SDRAM Performance


Pinout

Connection Diagram


Specifications

Symbol

Parameter

Limit Values

Unit

Min.

Max.

VIH

Input High Voltage

2.0

VCC+0.3

V

VIL

Input Low Voltage

0.5

0.8

V

VOH

Output High Voltage (IOUT = 2.0 mA)

2.4

-

V

VOL

Output Low Voltage (IOUT = 2.0 mA)

-

0.4

V

II(L)

Input Leakage Current, any input
(0 V < VIN < 3.6 V, all other inputs = 0V)

10

10

mA

IO(L)

Output leakage current
(DQ is disabled, 0V < VOUT < VCC)

10

10

mA




Description

The V436416S04V(C)TG-75 memory module is organized 16,777,216 x 64 bits in a 168 pin dual in line memory module (DIMM). The 16M x 64 memory module uses 16 Mosel-Vitelic 8M x 8 SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times are required.




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