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U PA2717GR

Features: • Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 7.5 A)RDS(on)2 = 8.9 mΩ MAX. (VGS = 4.5 V, ID = 7.5 A) • Low Ciss: Ciss = 3550 pF TYP. • Built-in gate protection diode • Small and surface mount package (Power SOP8)SpecificationsDrain...

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U PA2717GR: Features: • Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 7.5 A)RDS(on)2 = 8.9 mΩ MAX. (VGS = 4.5 V, ID = 7.5 A) • Low Ciss: Ciss = 3550 pF TYP. • Bu...

U PA2717GR Data Sheet

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Part Number:
U PA2717GR
Supply Ability:
5000

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Product Details

Description



Features:

• Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 7.5 A)  RDS(on)2 = 8.9 mΩ MAX. (VGS = 4.5 V, ID = 7.5 A)
• Low Ciss: Ciss = 3550 pF TYP.
• Built-in gate protection diode
• Small and surface mount package (Power SOP8) 
 


Specifications

Drain to Source Voltage (VGS = 0 V)                 VDSS              30 V
Gate to Source Voltage (VDS = 0 V)                 VGSS                 20 V
Drain Current (DC)                                          ID(DC)               15 A
Drain Current (pulse)Note1                           ID(pulse)             150 A
Total Power Dissipation Note2                          PT                    1 2 W
Total Power Dissipation Note3                          PT                    2 2 W
Channel Temperature                                     Tch                150 °C
Storage Temperature                                    Tstg 55 to + 150 °C
Single Avalanche Current Note4                      IAS                   15 A
Single Avalanche Energy Note4                       EAS                 22.5 mJ


Description

The U PA2717GR is P-Channel MOS Field Effect Transistor designed for power management  applications of notebook computers and Li-ion battery protection circuit.




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