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U PA1951

Features: • 1.8 V drive available• Low on-state resistance RDS(on)1 = 88 m MAX. (VGS = −4.5V, ID = −1.5 A)RDS(on)2 = 114 m MAX. (VGS = −3.0 V, ID = −1.5 A) RDS(on)3 = 133 m MAX. (VGS = −2.5 V, ID = −1.5 A) RDS(on)4 = 234 m MAX. (VGS = −1.8 V, I...

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SeekIC No. : 004534451 Detail

U PA1951: Features: • 1.8 V drive available• Low on-state resistance RDS(on)1 = 88 m MAX. (VGS = −4.5V, ID = −1.5 A)RDS(on)2 = 114 m MAX. (VGS = −3.0 V, ID = −1.5 A) RDS(on...

U PA1951 Data Sheet

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Part Number:
U PA1951
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 1.8 V drive available
• Low on-state resistance
   RDS(on)1 = 88 m MAX. (VGS = −4.5V, ID = −1.5 A)
   RDS(on)2 = 114 m MAX. (VGS = −3.0 V, ID = −1.5 A)
   RDS(on)3 = 133 m MAX. (VGS = −2.5 V, ID = −1.5 A)
   RDS(on)4 = 234 m MAX. (VGS = −1.8 V, ID = −1.0 A)


Specifications

PARAMETER
SYMBOL
RATING

UNIT

Drain to source voltage(VGS = 0 V)
VDSS
-12
V
Gate to source voltage(VDS = 0 V)
VGSS
±8.0
V
Drain current(DC)
ID(DC)
±2.5
A
Drain peak current(Pulse)1
ID(pulse)
±10
A
Total Power Dissipation (2 units)2
PT1
1.15
W
Total Power Dissipation (1 unit)2
PT2
0.57
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150

Notes 1. PW 10 s, Duty Cycle 1%
          2. Mounted on FR-4 board of 5000 mm2 x 1.1 mm, t 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.




Description

The U PA1951 is a switching device, which can be driven directly by a 1.8 V power source.The device features a low on-state resistance and excellent switching characteristics, and is suitable for application such as power switch of portable machine and so on.




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