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U PA2701GR

Features: • Low on-state resistanceRDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 7.0 A)RDS(on)2 = 11.6 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A)• Low Ciss: Ciss = 1200 pF TYP. (VDS = 10 V, VGS = 0 V)• Small and surface mount package (Power SOP8)SpecificationsDrain to Source Voltag...

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U PA2701GR: Features: • Low on-state resistanceRDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 7.0 A)RDS(on)2 = 11.6 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A)• Low Ciss: Ciss = 1200 pF TYP. (VDS = 10 V...

U PA2701GR Data Sheet

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Part Number:
U PA2701GR
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-state resistanceRDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 7.0 A)RDS(on)2 = 11.6 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A)
• Low Ciss: Ciss = 1200 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power SOP8)


Specifications

Drain to Source Voltage (VGS = 0 V)                        VDSS                30 V
Gate to Source Voltage (VDS = 0 V)                        VGSS              ±20 V
Drain Current (DC)                                                 ID(DC)             ±14 A
Drain Current (pulse) Note1                                 ID(pulse)            ±56 A
Total Power Dissipation (TA = 25°C) Note2             PT                   2.0 W
Channel Temperature                                              Tch              150 °C
Storage Temperature                                             Tstg  55 to +150 °C
Single Avalanche Current Note3                             IAS                      14 A
Single Avalanche Energy Note3                             EAS                  19.6 mJ


Description

The U PA2701GR is N-Channel MOS Field Effect Transistordesigned for DC/DC converters and power managementapplications of notebook computers.


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