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U PA1740TP

Features: • High voltage: VDSS = 200 V• Gate voltage rating: ±30 V• Low on-state resistance RDS(on) = 0.44 Ω MAX. (VGS = 10 V, ID = 3.5 A)• Low input capacitance Ciss = 420 pF TYP. (VDS = 10 V, VGS = 0 V)• Built-in gate protection diode• Small and surface ...

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U PA1740TP: Features: • High voltage: VDSS = 200 V• Gate voltage rating: ±30 V• Low on-state resistance RDS(on) = 0.44 Ω MAX. (VGS = 10 V, ID = 3.5 A)• Low input capacitance Ciss =...

U PA1740TP Data Sheet

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Part Number:
U PA1740TP
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High voltage: VDSS = 200 V
• Gate voltage rating: ±30 V
• Low on-state resistance RDS(on) = 0.44 Ω MAX. (VGS = 10 V, ID = 3.5 A)
• Low input capacitance Ciss = 420 pF TYP. (VDS = 10 V, VGS = 0 V)
• Built-in gate protection diode
• Small and surface mount package (Power HSOP8)
• Avalanche capability rated


Specifications

Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)Note2
Channel Temperature
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Repetitive Avalanche Current Note4
Repetitive Avalanche Energy Note4		 V DSS
V GSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
I AS
E AS
I AR
E AR		 200
±30
±7.0
±21
22
1.0
150
55 to + 150
7.0
4.9
7.0
2.2		 V
V
A
A
W
W
°C
°C
A
mJ
A
mJ

Notes 1. PW 10 µs, Duty Cycle 1%
          2. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
          3. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω, L = 100 µH, VGS = 20 0 V
          4. Tch 125°C, VDD = 100 V, RG = 25 Ω


Description

The U PA1740TP is N-channel MOS FET device that features a low on-state resistance and excellent swiching characteristics, and designed for high voltage applications such as DC/DC converter.


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