UF281OP

Features: · N-Channel Enhancement Mode Device· DMOS Structure· Lower Capacitances for Broadband Operation· Common Source Configuration· Lower Noise Floor· 100 MHz to 500 MHz OperationSpecifications Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Sourc...

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SeekIC No. : 004536539 Detail

UF281OP: Features: · N-Channel Enhancement Mode Device· DMOS Structure· Lower Capacitances for Broadband Operation· Common Source Configuration· Lower Noise Floor· 100 MHz to 500 MHz OperationSpecifications ...

floor Price/Ceiling Price

Part Number:
UF281OP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/22

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Product Details

Description



Features:

· N-Channel Enhancement Mode Device
· DMOS Structure
· Lower Capacitances for Broadband Operation
· Common Source Configuration
· Lower Noise Floor
· 100 MHz to 500 MHz Operation



Specifications

Parameter
Symbol
Rating
Units
Drain-Source Voltage
VDS
65
V
Gate-Source Voltage
VGS
20
V
Drain-Source Current
LDS
1.4
A
Power Dissipation
PD
26.9
W
Junction Temperature
TJ
200
Storage Temperature
TSTO
-55 to +150
Thermal Resistance
X
6.5
/W



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