UF2805B

The UF2805B is designed as one kind of RF MOSFET Power Transistor with 5W, 28V 100 to 500 MHz. Features of this device are:(1)N-channel enhancement mode device; (2)DUOS structure; (3)lower capacitances for broadband operation; (4)common source configuration; (5)lower noise floor; (6)100 MHz to 500 MHz operation.

The absolute maximum ratings of the UF2805B can be summarized as:(1)drain-source voltage: 65 V;(2)gate-source voltage: 20 V;(3)drain-source current: 1.4 A;(4)power dissipation: 14.4 W;(5)junction temperature: 200 ;(6)storage temperature: -55 to +150 ;(7)thermal resistance: 12.1 /W.

The electrical characteristics of this device can be summarized as:(1)Drain-Source Breakdown Voltage: 65 V;(2)Drain-Source Leakage Current: 1.0 mA;(3)Gate-Source Leakage Current: 1.0 uA;(4)Gate Threshold Voltage: 2.0 V to 6.0 V;(5)Forward Transconductance: 80 mS;(6)input Capacitance: 7 pF;(7)Output Capacitance: 5 pF;(8)Reverse Capacitance: 2.4 pF;(9)Power Gain: 10 dB;(10)Drain Efficiency: 50%;(11)Return Loss: 10 dB;(12)Load Mismatch Tolerance: 20:1. If you want to know more information about the UF2805B, please download the datasheet in www.seekic.com or www.chinaicmart.com .