UF28150J

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Drain-Source Breakdown Voltage : 65 V
Packaging : Tray
Gate-Source Breakdown Voltage : +/- 20 V
Continuous Drain Current : 16 A
Output Power : 150 W
Package / Case : Case 375-04
Frequency : 100 MHz to 500 MHz
Gain : 8 dB at 500 MHz


Features:

• N-Channel Enhancement Mode Device
• Applications
• 150 Watts CW
• Common Source Gemini Configuration
• RESFET Structure
• Internal Input Impedance Matching
• Gold Metallization


Description

The UF28150J is designed as one kind of RF MOSFET Power Transistor with lOOW, 28V 100 to 500 MHz. Features of this device are:(1)N-channel enhancement mode device; (2)applications; (3)150 watts CW; (4)common source gemini configuration; (5)resfet structure; (6)internal input impedance matching; (7)gold metallization.

The absolute maximum ratings of the UF28150J can be summarized as:(1)drain-source voltage: 60 V;(2)gate-source voltage: 20 V;(3)drain-source current: 28 A;(4)power dissipation: 233 W;(5)junction temperature: 200 ;(6)storage temperature: -55 to +150 ;(7)thermal resistance: 0.75 /W.

The electrical characteristics of this device can be summarized as:(1)Drain-Source Breakdown Voltage: 60 V;(2)Drain-Source Leakage Current: 4.0 mA;(3)Gate-Source Leakage Current: 2.0 uA;(4)Gate Threshold Voltage: 2.0 V to 6.0 V;(5)Forward Transconductance: 1.0 S;(6)input Capacitance: 200 pF;(7)Output Capacitance: 50 pF;(8)Reverse Capacitance: 14 pF;(9)Power Gain: 10 dB;(10)Drain Efficiency: 50%;(11)Return Loss: 10 dB;(12)Load Mismatch Tolerance: 3.0:1. If you want to know more information about the UF28150J, please download the datasheet in www.seekic.com or www.chinaicmart.com .