UF28100V

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Drain-Source Breakdown Voltage : 65 V
Output Power : 100 W
Packaging : Tray
Gate-Source Breakdown Voltage : +/- 20 V
Continuous Drain Current : 12 A
Frequency : 100 MHz to 500 MHz
Package / Case : Case 744A-01
Gain : 10 dB at 500 MHz


Description

The UF28100V is designed as one kind of RF MOSFET Power Transistor with lOOW, 28V 100 to 500 MHz. Features of this device are:(1)N-channel enhancement mode device; (2)DMOS structure; (3)lower capacitances for broadband operation; (4)high saturated output power; (5)lower noise figure than competitive devices.

The absolute maximum ratings of the UF28100V can be summarized as:(1)drain-source voltage: 65 V;(2)gate-source voltage: 20 V;(3)drain-source current: 12 A;(4)power dissipation: 250 W;(5)junction temperature: 200 ;(6)storage temperature: -55 to +150 ;(7)thermal resistance: 0.70 /W.

The electrical characteristics of this device can be summarized as:(1)Drain-Source Breakdown Voltage: 65 V;(2)Drain-Source Leakage Current: 3.0 mA;(3)Gate-Source Leakage Current: 3.0 uA;(4)Gate Threshold Voltage: 2.0 V to 6.0 V;(5)Forward Transconductance: 1.5 S;(6)input Capacitance: 135 pF;(7)Output Capacitance: 90 pF;(8)Reverse Capacitance: 24 pF;(9)Power Gain: 10 dB;(10)Drain Efficiency: 50%;(11)Return Loss: 10 dB;(12)Load Mismatch Tolerance: 30:1. If you want to know more information about the UF28100V, please download the datasheet in www.seekic.com or www.chinaicmart.com .