Features: ·N-Channel Enhancement Mode Device·DMOS Structure·Lower Capacitances for Broadband Operation·High Saturated Output Power·Lower Noise Figure Than Competitive DevicesDescriptionThe UF281OOM is designed as one kind of RF MOSFET Power Transistor with lOOW, 28V 100 to 500 MHz. Features of thi...
UF281OOM: Features: ·N-Channel Enhancement Mode Device·DMOS Structure·Lower Capacitances for Broadband Operation·High Saturated Output Power·Lower Noise Figure Than Competitive DevicesDescriptionThe UF281OOM ...
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The UF281OOM is designed as one kind of RF MOSFET Power Transistor with lOOW, 28V 100 to 500 MHz. Features of this device are:(1)N-channel enhancement mode device; (2)DMOS structure; (3)lower capacitances for broadband operation; (4)high saturated output power; (5)lower noise figure than competitive devices.
The absolute maximum ratings of the UF281OOM can be summarized as:(1)drain-source voltage: 65 V;(2)gate-source voltage: 20 V;(3)drain-source current: 12 A;(4)power dissipation: 250 W;(5)junction temperature: 200 ;(6)storage temperature: -55 to +150 ;(7)thermal resistance: 0.7 /W.
The electrical characteristics of this device UF281OOM can be summarized as:(1)Drain-Source Breakdown Voltage: 65 V;(2)Drain-Source Leakage Current: 3.0 mA;(3)Gate-Source Leakage Current: 3.0 uA;(4)Gate Threshold Voltage: 2.0 V to 6.0 V;(5)Forward Transconductance: 1.5 S;(6)input Capacitance: 135 pF;(7)Output Capacitance: 90 pF;(8)Reverse Capacitance: 24 pF;(9)Power Gain: 10 dB;(10)Drain Efficiency: 50%;(11)Return Loss: 10 dB;(12)Load Mismatch Tolerance: 30:1. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .