Features: ·N-Channel Enhancement Mode Device·DMOS Structure·Lower Capacitances for Broadband Operation·High Saturated Output Power·Lower Noise Figure Than Competitive DevicesSpecifications Parameter Symbol Rating Untis Drain-Source Voltage VDS 65 V Gate-Source Voltage...
UF281OOH: Features: ·N-Channel Enhancement Mode Device·DMOS Structure·Lower Capacitances for Broadband Operation·High Saturated Output Power·Lower Noise Figure Than Competitive DevicesSpecifications Para...
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Parameter |
Symbol |
Rating |
Untis |
Drain-Source Voltage |
VDS |
65 |
V |
Gate-Source Voltage |
VGS |
20 |
V |
Drain-Source voltage |
LDS |
12 |
A |
Power Dissipation |
PD |
250 |
W |
Junction Temperature |
TJ |
200 |
|
Storage Temperature |
TSTG |
-55 to+150 |
|
Thermal Resistance |
JC |
0.7 |
/W |