UF281OOH Selling Leads, Price trend, UF281OOH DataSheet download, circuit diagram from SeekIC.com

Features: ·N-Channel Enhancement Mode Device·DMOS Structure·Lower Capacitances for Broadband Operation·High Saturated Output Power·Lower Noise Figure Than Competitive DevicesSpecifications Parameter Symbol Rating Untis Drain-Source Voltage VDS 65 V Gate-Source Voltage...

See larger image

SeekIC No. : 004536536 Detail

UF281OOH: Features: ·N-Channel Enhancement Mode Device·DMOS Structure·Lower Capacitances for Broadband Operation·High Saturated Output Power·Lower Noise Figure Than Competitive DevicesSpecifications Para...

UF281OOH Data Sheet

Get Latest Price

Part Number:: UF281OOH
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/12/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

UF2805B evaluate
DescriptionThe UF2805B is designed as one kind of RF MOSFET Power Transistor with 5W, 28V 100 to 5...
UF28100V evaluate
US $123.37 - 143.92 / Piece

Transistors RF MOSFET Power 100-500MHz 100Watts 28Volt 10dB
UF28150J evaluate
US $172.26 - 202.66 / Piece

Transistors RF MOSFET Power 100-500MHz 150Watts 28Volt Gain 8dB

Product Details

Description

Features:

·N-Channel Enhancement Mode Device
·DMOS Structure
·Lower Capacitances for Broadband Operation
·High Saturated Output Power
·Lower Noise Figure Than Competitive Devices

Specifications

Parameter	Symbol	Rating	Untis
Drain-Source Voltage	V_DS	65	V
Gate-Source Voltage	V_GS	20	V
Drain-Source voltage	L_DS	12	A
Power Dissipation	P_D	250	W
Junction Temperature	T_J	200
Storage Temperature	T_STG	-55 to+150
Thermal Resistance	_JC	0.7	/W

Customers Who Bought This Item Also Bought

UF28100V
US $$1.00 - 10.00 / Piece

Supply Ability:10000Week

View details
UF2840G
US $$39.00 - 50.00 / Piece

Supply Ability:10000Week

View details
UF2840G
US $$1.00 - 10.00 / Piece

Supply Ability:10000Week

View details
BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

UF281OOH

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Discrete Semiconductor Products(7459)

Sensors, Transducers(2877)

Kits(573)

RF and RFID(1780)

Circuit Protection(3850)

Cables, Wires - Management(4448)