TSHF6410, US $ .24-.38 , Vishay, TSHF6410 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 0018730 Detail

TSHF6410: Infrared Emitters 22 Degree 160mW 5V

TSHF6410 Data Sheet

US $ .24~.38 / Piece | Get Latest Price

Part Number:: TSHF6410
Mfg:: Vishay
Supply Ability:: 5000

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0~1
1~10
10~50
50~100

Unit Price
$.38
$.32
$.28
$.24

Processing time
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Upload time: 2025/1/11

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Recent History
What is this?

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Features: ` High modulation bandwidth (10 MHz)` High radiant power` Low forward voltage` Suitable ...
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US $.24 - .38 / Piece

Infrared Emitters High Speed Emitter 5V 50mW 870nm 24 Deg
TSHF5400 evaluate
Features: ` High modulation bandwidth (10 MHz)` Extra high radiant power and radiant intensity` Lo...

Product Details

Quick Details

Wavelength :	890 nm	Radiant Intensity :	70 mW/sr
Maximum Operating Temperature :	+ 85 C	Minimum Operating Temperature :	- 40 C
Package / Case :	T-1 3/4	Packaging :	Bulk

Description

Beam Angle :
Radiant Intensity : 70 mW/sr
Maximum Operating Temperature : + 85 C
Minimum Operating Temperature : - 40 C
Packaging : Bulk
Package / Case : T-1 3/4
Wavelength : 890 nm

Features:

• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): 5
• Peak wavelength: _p = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: f_c = 12 MHz
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

Application

• Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements
• Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK - coded, 450 kHz or 1.3 MHz)

Specifications

PARAMETER	TEST CONDITION	SYMBOL	VALUE	UNIT
Reverse voltage		V_R	5	V
Forward current		I_F	100	mA
Peak forward current	t_p/T = 0.5, t_p = 100 s	I_FM	200	mA
Surge forward current	t_p= 100 s	I_FSM	1.5	A
Power dissipation		P_V	160	mW

Description

TSHF6410 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and igh speed, molded in a clear, untinted plastic package.

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TSHF6410

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