Features: ` High modulation bandwidth (10 MHz)` High radiant power` Low forward voltage` Suitable for high pulse current operation` Standard T13/4(ø 5 mm) package` Angle of half intensity = ± 10°` Peak wavelength p = 870 nm` High reliability` Good spectral matching to Si photodetectorsAppli...
TSHF5200: Features: ` High modulation bandwidth (10 MHz)` High radiant power` Low forward voltage` Suitable for high pulse current operation` Standard T13/4(ø 5 mm) package` Angle of half intensity = ±...
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Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements.
TSHF5200 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK coded, 450 kHz or 1.3 MHz).
Parameter | Test Conditions | Symbol | Value | Unit |
Reverse Voltage | VR | 5 | V | |
Forward Current | IF | 100 | mA | |
Peak Forward Current | tp/T = 0.5, tp = 100s | IFM | 200 | mA |
Surge Forward Current | tp100s | IFSM | 1.5 | A |
Power Dissipation | PV | 160 | mW | |
Junction Temperature | Tj | 100 | ||
Operating Temperature Range | Tamb | 40...+100 | ||
Storage Temperature Range | Tstg | 40...+100 | ||
Soldering Temperature | t 5sec, 2 mm from case | Tsd | 260 | |
Thermal Resistance Junction/Ambient | RthJA | 270 | K/W |
TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic package.
The new technology combines the high speed of DH GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology.
The TSHF5200 emitter is suitable for serial infrared links according to the IrDAstandard.