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TSHF5400

Features: ` High modulation bandwidth (10 MHz)` Extra high radiant power and radiant intensity` Low forward voltage` Suitable for high pulse current operation` Standard T1 (ø 5 mm) package` Angle of half intensity j = ± 22°` Peak wavelength p = 870 nm` High reliability` Good spectral match...

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SeekIC No. : 004529490 Detail

TSHF5400: Features: ` High modulation bandwidth (10 MHz)` Extra high radiant power and radiant intensity` Low forward voltage` Suitable for high pulse current operation` Standard T1 (ø 5 mm) package` ...

TSHF5400 Data Sheet

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Part Number:
TSHF5400
Supply Ability:
5000

Price Break

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

` High modulation bandwidth (10 MHz)
` Extra high radiant power and radiant intensity
` Low forward voltage
` Suitable for high pulse current operation
` Standard T1 (ø 5 mm) package
` Angle of half intensity j = ± 22°
` Peak wavelength p = 870 nm
` High reliability
` Good spectral matching to Si photodetectors


Application

Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements.

TSHF5400 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK coded, 450 kHz or 1.3 MHz).

 




Specifications

Parameter Test Conditions Symbol Value Unit
Reverse Voltage   VR 5 V
Forward Current   IF 100 mA
Peak Forward Current tp/T = 0.5, tp = 100s IFM 200 mA
Surge Forward Current tp100s IFSM 1.5 A
Power Dissipation   PV 160 mW
Junction Temperature   Tj 100
Operating Temperature Range   Tamb 40...+85
Storage Temperature Range   Tstg 40...+100
Soldering Temperature t 5sec, 2 mm from case Tsd 260
Thermal Resistance Junction/Ambient   RthJA



Description

TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic package.

The new technology combines the high speed of DH GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology.




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