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TSHF5410

Infrared Emitters 22 Degree 180mW 5V

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SeekIC No. : 0018832 Detail

TSHF5410: Infrared Emitters 22 Degree 180mW 5V

TSHF5410 Data Sheet

floor Price/Ceiling Price

US $ .24~.38 / Piece | Get Latest Price
Part Number:
TSHF5410
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~50
  • 50~100
  • Unit Price
  • $.38
  • $.32
  • $.28
  • $.24
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Quick Details

Wavelength : 890 nm Radiant Intensity : 650 mW/sr
Maximum Operating Temperature : + 85 C Minimum Operating Temperature : - 40 C
Package / Case : T-1 3/4 Packaging : Bulk    

Description

Beam Angle :
Maximum Operating Temperature : + 85 C
Minimum Operating Temperature : - 40 C
Packaging : Bulk
Package / Case : T-1 3/4
Wavelength : 890 nm
Radiant Intensity : 650 mW/sr


Features:

• High modulation bandwidth
• Extra high radiant power and radiant intensity
• Low forward voltage
• Suitable for high pulse current operation
• Standard package T-1¾ (∅ 5 mm)
• Angle of half intensity ϕ = ± 22°
• Peak wavelength p = 890 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC




Application

·Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements. TSHF5410 is ideal for the design of transmission systems according to IrDA requirements and for carrie frequency based systems (e.g. ASK / FSK - coded, 450 kHz or 1.3 MHz).




Specifications

Parameter Symbol TEST CONDITIONS Value Unit
Reverse Voltage VR 5 V
Forward Current IF 100 mA
Peak Forward Current IFM tp/T = 0.5, tp = 100 s 200 mA
Surge Forward Current IFSM tp = 100 s 1.5 A
Power Dissipation PV 180 mW
Junction Temperature Tj 100
Operating Temperature Range Tamb - 40 to + 85
Storage Temperature Range Tstg - 40 to + 100
Soldering Temperature Tsd t 5 sec, 2 mm from case 260
Thermal Resistance Junction/
Ambient		 RthJA 270 K/W





Description

TSHF5410 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package.

TSHF5410 combines high speed with high radiant power at wavelength of 890 nm.






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