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TSHF5210

Infrared Emitters High Speed Emitter 5V 50mW 870nm 24 Deg

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SeekIC No. : 0018785 Detail

TSHF5210: Infrared Emitters High Speed Emitter 5V 50mW 870nm 24 Deg

TSHF5210 Data Sheet

floor Price/Ceiling Price

US $ .24~.38 / Piece | Get Latest Price
Part Number:
TSHF5210
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~50
  • 50~100
  • Unit Price
  • $.38
  • $.32
  • $.28
  • $.24
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Quick Details

Wavelength : 890 nm Radiant Intensity : 1400 mW/sr
Maximum Operating Temperature : + 85 C Minimum Operating Temperature : - 40 C
Package / Case : T-1 3/4 Packaging : Bulk    

Description

Beam Angle :
Maximum Operating Temperature : + 85 C
Minimum Operating Temperature : - 40 C
Packaging : Bulk
Package / Case : T-1 3/4
Wavelength : 890 nm
Radiant Intensity : 1400 mW/sr


Features:

• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): 5
• Leads with stand-off
• Peak wavelength: p = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 12 MHz
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC




Application

• Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements
• Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK - coded, 450 kHz or 1.3 MHz)
• Smoke-automatic fire detectors






Specifications

PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5
V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 s
IFM
200
mA
Surge forward current
tp = 100 s
IFSM
1.5
A
Power dissipation
PV
160
mW





Description

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero, TSHF5210




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