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TPCS8303

Application• Small footprint due to small and thin package• Low drain-source ON resistance: RDS (ON) = 15 m (typ.)• High forward transfer admittance: |Yfs| = 18 S (typ.)• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)• Enhancement mode: Vth = −...

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TPCS8303: Application• Small footprint due to small and thin package• Low drain-source ON resistance: RDS (ON) = 15 m (typ.)• High forward transfer admittance: |Yfs| = 18 S (typ.)• Low...

TPCS8303 Data Sheet

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Part Number:
TPCS8303
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 15 m (typ.)
• High forward transfer admittance: |Yfs| = 18 S (typ.)
• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)
• Enhancement mode: Vth = −0.45~−1.2 V (VDS = −10 V, ID = −200 A)


Pinout

Connection Diagram


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−20
V
Drain-gate voltage (RGS = 20 k)
VDGR
−20
V
Gate-source voltage
VGSS
±12
V
Drain current DC (Note 1)
ID
−5
A
Pulse (Note 1)
IDP
−20
Drain power
dissipation
(t = 10 s)
(Note 2a)		 Single-device
operation (Note 3a)
PD (1)
1.1
W
Single-device value
at dual operation
(Note 3b)
PD (2)
0.75
Drain power
dissipation
(t = 10 s)
(Note 2b)		 Single-device
operation (Note 3a)
PD (1)
0.6
W
Single-device value
at dual operation
(Note 3b)
PD (2)
0.35
Single pulse avalanche energy
(Note 4)
EAS
16.3
mJ
Avalanche current
IAR
−5
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.075
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
−55~150

Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.




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