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TPCS8004

Features: • Small footprint due to small and thin package• Low drain-source ON resistance: R DS (ON) = 0.56 (typ.)• High forward transfer admittance: |Yfs| = 1.8 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS = 200 V)• Enhancement model: Vth = 1.5~3.5 V (VDS ...

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TPCS8004: Features: • Small footprint due to small and thin package• Low drain-source ON resistance: R DS (ON) = 0.56 (typ.)• High forward transfer admittance: |Yfs| = 1.8 S (typ.)• L...

TPCS8004 Data Sheet

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Part Number:
TPCS8004
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Small footprint due to small and thin package
• Low drain-source ON resistance: R DS (ON) = 0.56 (typ.)
• High forward transfer admittance: |Yfs| = 1.8 S (typ.)
• Low leakage current: IDSS = 100 A (max) (VDS = 200 V)
• Enhancement model: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Drain-gate voltage (RGS = 20 k)
VDGR
200
V
Gate-source voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
1.3
A
Pulse (Note 1)
IDP
5.2
Drain power dissipation (t = 5 s)
(Note 2a)
PD
1.5
W
Drain power dissipation (t = 10 s)
(Note 2a)
PD
0.6
W
Single pulse avalanche energy (Note3)
EAS
1.05
mJ
Avalanche current
IAR
1.3
A
Repetitive avalanche energy
(Note 4)
EAR
0.15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note: Note 1, Note 2, Note 3, Note 4  See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..




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