Position: Home  > All Categories> Integrated Circuits (ICs) > TPCS8004

TPCS8004

Features: • Small footprint due to small and thin package• Low drain-source ON resistance: R DS (ON) = 0.56 (typ.)• High forward transfer admittance: |Yfs| = 1.8 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS = 200 V)• Enhancement model: Vth = 1.5~3.5 V (VDS ...

product image

TPCS8004 Picture
See larger image
SeekIC No. : 004526236 Detail

TPCS8004: Features: • Small footprint due to small and thin package• Low drain-source ON resistance: R DS (ON) = 0.56 (typ.)• High forward transfer admittance: |Yfs| = 1.8 S (typ.)• L...

TPCS8004 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
TPCS8004
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Small footprint due to small and thin package
• Low drain-source ON resistance: R DS (ON) = 0.56 (typ.)
• High forward transfer admittance: |Yfs| = 1.8 S (typ.)
• Low leakage current: IDSS = 100 A (max) (VDS = 200 V)
• Enhancement model: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Drain-gate voltage (RGS = 20 k)
VDGR
200
V
Gate-source voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
1.3
A
Pulse (Note 1)
IDP
5.2
Drain power dissipation (t = 5 s)
(Note 2a)
PD
1.5
W
Drain power dissipation (t = 10 s)
(Note 2a)
PD
0.6
W
Single pulse avalanche energy (Note3)
EAS
1.05
mJ
Avalanche current
IAR
1.3
A
Repetitive avalanche energy
(Note 4)
EAR
0.15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note: Note 1, Note 2, Note 3, Note 4  See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Discrete Semiconductor Products
T508N12TOF
MUR20040
Transformers
TM-09210
BV222-1-00992
LED Products
LM24P20
KCG057QV1DB-G770
Optoelectronics
SFH7770
TLP423J
Memory Cards, Modules
WT32
VTL5C7
Connectors, Interconnects
ASP-134488-01
WM4078-ND
View more